Paper Abstract and Keywords |
Presentation |
2012-06-21 16:35
Interface controlled silicide Schottky S/D for future 3D devices Yuta Tamura, Ryo Yoshihara, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech) SDM2012-59 Link to ES Tech. Rep. Archives: SDM2012-59 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper presents Ni/Si stacked-structure as interface control for silicidation. An atomically flat $NiSi_2$ film interface on both Si substrate and Si Fin was achieved by Ni/Si stacked-structure and stable physical and electrical properties in a wide process-temperature window were maintained. Schottky barrier height tuning capability is successfully demonstrated with P or B incorporation while presenting thermal stability. Furthermore, suppression of ambipolar behavior in SOI silicide Schottky S/D MOSFET is confirmed by Schottky barrier height moduration. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
stacked-structure / silicide / interface control / Schottky barrier height / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 92, SDM2012-59, pp. 87-92, June 2012. |
Paper # |
SDM2012-59 |
Date of Issue |
2012-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2012-59 Link to ES Tech. Rep. Archives: SDM2012-59 |
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