Paper Abstract and Keywords |
Presentation |
2012-06-21 10:20
High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-47 Link to ES Tech. Rep. Archives: SDM2012-47 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Germanium has recently attracted much attention as a promising channel material for next generation metal-oxide-semiconductor field-effect transistors (MOSFETs) because of the higher carrier mobility compared to the conventional Si. We have proposed ultrathin germanium oxynitride (GeON) layers formed by high density plasma nitridation of ultrathin thermal germanium oxide (GeO2). In this study, we fabricated Ge p- and n-MOSFETs with ultrathin GeON dielectrics and evaluated their electrical characteristics. We successfully demonstrated normal MOSFETs operation with EOT of 1.4 nm, and obtained higher mobility than that of Si MOSFET. These results indicate that ultrathin GeON is one of the possible candidates for gate dielectrics of high performance Ge MOSFETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Germanium / GeON / Plasma nitridation / MOSFET / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 92, SDM2012-47, pp. 23-26, June 2012. |
Paper # |
SDM2012-47 |
Date of Issue |
2012-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-47 Link to ES Tech. Rep. Archives: SDM2012-47 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-06-21 - 2012-06-21 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics |
Sub Title (in English) |
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Keyword(1) |
Germanium |
Keyword(2) |
GeON |
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Plasma nitridation |
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MOSFET |
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1st Author's Name |
Yuya Minoura |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Atsushi Kasuya |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
Takuji Hosoi |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
4th Author's Name |
Takayoshi Shimura |
4th Author's Affiliation |
Osaka University (Osaka Univ.) |
5th Author's Name |
Heiji Watanabe |
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Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-06-21 10:20:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2012-47 |
Volume (vol) |
vol.112 |
Number (no) |
no.92 |
Page |
pp.23-26 |
#Pages |
4 |
Date of Issue |
2012-06-14 (SDM) |
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