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Paper Abstract and Keywords
Presentation 2012-06-21 11:55
Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks
Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-51 Link to ES Tech. Rep. Archives: SDM2012-51
Abstract (in Japanese) (See Japanese page) 
(in English) Effective work function control and equivalent oxide thickness (EOT) scaling are the major concerns for implementing metal/high-k gate stacks with gate-first process. In addition to interfacial SiO2 growth, it has been reported that metal elements such as Hf and La atoms in high-k layers diffuse into gate electrode after high-temperature activation annealing. In this work, we have investigated the Hf diffusion kinetics in TiN/HfSiO gate stacks. The Hf upward diffusion is found to be independent of interfacial SiO$_2$ growth, but depends on the amount of oxygen in the gate stacks. It is also revealed that, when the TiN electrode contains a certain amount of oxygen, Hf diffusion into TiN occurs at above 650$^o$C and leads to high-k degradation.
Keyword (in Japanese) (See Japanese page) 
(in English) high-k dielectrics / metal gate / diffusion / HfSiO / TiN / MIPS / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 92, SDM2012-51, pp. 43-46, June 2012.
Paper # SDM2012-51 
Date of Issue 2012-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-51 Link to ES Tech. Rep. Archives: SDM2012-51

Conference Information
Committee SDM  
Conference Date 2012-06-21 - 2012-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2012-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks 
Sub Title (in English)  
Keyword(1) high-k dielectrics  
Keyword(2) metal gate  
Keyword(3) diffusion  
Keyword(4) HfSiO  
Keyword(5) TiN  
Keyword(6) MIPS  
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Keyword(8)  
1st Author's Name Takuji Hosoi  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Yuki Odake  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Hiroaki Arimura  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Keisuke Chikaraishi  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Naomu Kitano  
5th Author's Affiliation Osaka University (Osaka Univ.)
6th Author's Name Takayoshi Shimura  
6th Author's Affiliation Osaka University (Osaka Univ.)
7th Author's Name Heiji Watanabe  
7th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2012-06-21 11:55:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2012-51 
Volume (vol) vol.112 
Number (no) no.92 
Page pp.43-46 
#Pages
Date of Issue 2012-06-14 (SDM) 


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