Paper Abstract and Keywords |
Presentation |
2012-06-21 11:55
Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-51 Link to ES Tech. Rep. Archives: SDM2012-51 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Effective work function control and equivalent oxide thickness (EOT) scaling are the major concerns for implementing metal/high-k gate stacks with gate-first process. In addition to interfacial SiO2 growth, it has been reported that metal elements such as Hf and La atoms in high-k layers diffuse into gate electrode after high-temperature activation annealing. In this work, we have investigated the Hf diffusion kinetics in TiN/HfSiO gate stacks. The Hf upward diffusion is found to be independent of interfacial SiO$_2$ growth, but depends on the amount of oxygen in the gate stacks. It is also revealed that, when the TiN electrode contains a certain amount of oxygen, Hf diffusion into TiN occurs at above 650$^o$C and leads to high-k degradation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
high-k dielectrics / metal gate / diffusion / HfSiO / TiN / MIPS / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 92, SDM2012-51, pp. 43-46, June 2012. |
Paper # |
SDM2012-51 |
Date of Issue |
2012-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-51 Link to ES Tech. Rep. Archives: SDM2012-51 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-06-21 - 2012-06-21 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks |
Sub Title (in English) |
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Keyword(1) |
high-k dielectrics |
Keyword(2) |
metal gate |
Keyword(3) |
diffusion |
Keyword(4) |
HfSiO |
Keyword(5) |
TiN |
Keyword(6) |
MIPS |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Takuji Hosoi |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Yuki Odake |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
Hiroaki Arimura |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
4th Author's Name |
Keisuke Chikaraishi |
4th Author's Affiliation |
Osaka University (Osaka Univ.) |
5th Author's Name |
Naomu Kitano |
5th Author's Affiliation |
Osaka University (Osaka Univ.) |
6th Author's Name |
Takayoshi Shimura |
6th Author's Affiliation |
Osaka University (Osaka Univ.) |
7th Author's Name |
Heiji Watanabe |
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Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-06-21 11:55:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2012-51 |
Volume (vol) |
vol.112 |
Number (no) |
no.92 |
Page |
pp.43-46 |
#Pages |
4 |
Date of Issue |
2012-06-14 (SDM) |
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