講演抄録/キーワード |
講演名 |
2012-06-27 14:15
Control Effect of New Optimized Structure of Planar Thin Floating Gate (FG) NAND Flash to Fringing Field ○Do-Bin Kim・Yoon Kim・Se Hwan Park・Wandong Kim・Joo Yun Seo・Seung-Hyun Kim・Byung-Gook Park(Seoul National Univ.) エレソ技報アーカイブはこちら |
抄録 |
(和) |
As cell size of floating gate (FG) type NAND flash memory shrinks, formation of structure which has control gate wrapping around FG has become difficult. Therefore, planar thin FG NAND device has been proposed. However, on scaled planar gate type, it has been reported that there are some problems with obtaining sufficient memory window as well as subthreshold slope (SS) degradation due to unwanted fringing field from control gate. In this paper, we suggest new optimized structure that can solve these problems, and demonstrate its advantages by using 3D TCAD simulation. |
(英) |
As cell size of floating gate (FG) type NAND flash memory shrinks, formation of structure which has control gate wrapping around FG has become difficult. Therefore, planar thin FG NAND device has been proposed. However, on scaled planar gate type, it has been reported that there are some problems with obtaining sufficient memory window as well as subthreshold slope (SS) degradation due to unwanted fringing field from control gate. In this paper, we suggest new optimized structure that can solve these problems, and demonstrate its advantages by using 3D TCAD simulation. |
キーワード |
(和) |
Planar Thin FG NAND flash memory / subthreshold slope(SS) / memory window / / / / / |
(英) |
Planar Thin FG NAND flash memory / subthreshold slope(SS) / memory window / / / / / |
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