講演抄録/キーワード |
講演名 |
2012-06-27 16:00
A New RSD Bottom Gate Poly-Si Thin Film Transistor With Inside Spacer ○Yi-Hsiang Chiu・Shan-Jen Yang・Feng-Tso Chien(Feng Chia Univ.)・Chii-Wen Chen(Minghsin Univ.) エレソ技報アーカイブはこちら |
抄録 |
(和) |
In this research, a raised source/drain (RSD), accompanied with an inside spacer bottom gate poly-Si thin film transistor structure, has been proposed and discussed. The gate under inside spacer can serve as a field plate and create a field-induced drain region to reduce electric field. In addition, the RSD can spread lateral electric field near drain region without reducing too much ON-state current, and the channel was deposited after gate oxide resulted in good interface characteristic between gate oxide and channel. Therefore, the proposed poly-Si TFT is suitable to be used in active-matrix flat panel electronics. |
(英) |
In this research, a raised source/drain (RSD), accompanied with an inside spacer bottom gate poly-Si thin film transistor structure, has been proposed and discussed. The gate under inside spacer can serve as a field plate and create a field-induced drain region to reduce electric field. In addition, the RSD can spread lateral electric field near drain region without reducing too much ON-state current, and the channel was deposited after gate oxide resulted in good interface characteristic between gate oxide and channel. Therefore, the proposed poly-Si TFT is suitable to be used in active-matrix flat panel electronics. |
キーワード |
(和) |
raised source/drain (RSD) / inside spacer (IS) / thin film transistor (TFT) / / / / / |
(英) |
raised source/drain (RSD) / inside spacer (IS) / thin film transistor (TFT) / / / / / |
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