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Paper Abstract and Keywords
Presentation 2012-06-27 16:00
A New RSD Bottom Gate Poly-Si Thin Film Transistor With Inside Spacer
Yi-Hsiang Chiu, Shan-Jen Yang, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) In this research, a raised source/drain (RSD), accompanied with an inside spacer bottom gate poly-Si thin film transistor structure, has been proposed and discussed. The gate under inside spacer can serve as a field plate and create a field-induced drain region to reduce electric field. In addition, the RSD can spread lateral electric field near drain region without reducing too much ON-state current, and the channel was deposited after gate oxide resulted in good interface characteristic between gate oxide and channel. Therefore, the proposed poly-Si TFT is suitable to be used in active-matrix flat panel electronics.
Keyword (in Japanese) (See Japanese page) 
(in English) raised source/drain (RSD) / inside spacer (IS) / thin film transistor (TFT) / / / / /  
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Conference Information
Committee SDM ED  
Conference Date 2012-06-27 - 2012-06-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen-kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2012-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A New RSD Bottom Gate Poly-Si Thin Film Transistor With Inside Spacer 
Sub Title (in English)  
Keyword(1) raised source/drain (RSD)  
Keyword(2) inside spacer (IS)  
Keyword(3) thin film transistor (TFT)  
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1st Author's Name Yi-Hsiang Chiu  
1st Author's Affiliation Feng Chia University (Feng Chia Univ.)
2nd Author's Name Shan-Jen Yang  
2nd Author's Affiliation Feng Chia University (Feng Chia Univ.)
3rd Author's Name Feng-Tso Chien  
3rd Author's Affiliation Feng Chia University (Feng Chia Univ.)
4th Author's Name Chii-Wen Chen  
4th Author's Affiliation Minghsin University (Minghsin Univ.)
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Speaker Author-1 
Date Time 2012-06-27 16:00:00 
Presentation Time 15 minutes 
Registration for ED 
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