Paper Abstract and Keywords |
Presentation |
2012-06-28 10:00
Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Low temperature processes such as plasma process are required for realizing Ge metal-oxide-semiconductor field effect transistors (MOSFETs). However, plasma-induced damages could induce degradation of device performances. We have investigated the effect of the light exposure during plasma process on the electrical properties of GeO2/Ge and Al2O3/Ge MOS structures. We found that the degradation of the electrical properties due to light exposure for GeO2/Ge interface is much smaller than those for Al2O3/Ge interface. Also, the H2O exposures during atomic layer deposition (ALD) process and the air exposure induce the degradation of GeO2/Ge interface properties. Besides, we found that the air exposure enhances the degradation of GeO2/Ge interface with light exposure. These results strongly suggest that the GeO2/Ge interfaces are basically robust for the light exposure, and that it is essentially important to suppress moisture or H2O exposure in order to maintain a high quality GeO2/Ge interface during a plasma process. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GeO2 / interface / light exposure / Al2O3 / Ge / plasma / air exposure / |
Reference Info. |
IEICE Tech. Rep. |
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Conference Information |
Committee |
SDM ED |
Conference Date |
2012-06-27 - 2012-06-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Okinawa Seinen-kaikan |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-06-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures |
Sub Title (in English) |
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Keyword(1) |
GeO2 |
Keyword(2) |
interface |
Keyword(3) |
light exposure |
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Al2O3 |
Keyword(5) |
Ge |
Keyword(6) |
plasma |
Keyword(7) |
air exposure |
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1st Author's Name |
Kusumandari |
1st Author's Affiliation |
Nagoya University (Nagoya Univ.) |
2nd Author's Name |
Wakana Takeuchi |
2nd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
3rd Author's Name |
Kimihiko Kato |
3rd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
4th Author's Name |
Shigehisa Shibayama |
4th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
5th Author's Name |
Mitsuo Sakashita |
5th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
6th Author's Name |
Noriyuki Taoka |
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Nagoya University (Nagoya Univ.) |
7th Author's Name |
Osamu Nakatsuka |
7th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
8th Author's Name |
Shigeaki Zaima |
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Nagoya University (Nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-06-28 10:00:00 |
Presentation Time |
15 minutes |
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SDM |
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