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Paper Abstract and Keywords
Presentation 2012-06-28 10:00
Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures
Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) Low temperature processes such as plasma process are required for realizing Ge metal-oxide-semiconductor field effect transistors (MOSFETs). However, plasma-induced damages could induce degradation of device performances. We have investigated the effect of the light exposure during plasma process on the electrical properties of GeO2/Ge and Al2O3/Ge MOS structures. We found that the degradation of the electrical properties due to light exposure for GeO2/Ge interface is much smaller than those for Al2O3/Ge interface. Also, the H2O exposures during atomic layer deposition (ALD) process and the air exposure induce the degradation of GeO2/Ge interface properties. Besides, we found that the air exposure enhances the degradation of GeO2/Ge interface with light exposure. These results strongly suggest that the GeO2/Ge interfaces are basically robust for the light exposure, and that it is essentially important to suppress moisture or H2O exposure in order to maintain a high quality GeO2/Ge interface during a plasma process.
Keyword (in Japanese) (See Japanese page) 
(in English) GeO2 / interface / light exposure / Al2O3 / Ge / plasma / air exposure /  
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Conference Information
Committee SDM ED  
Conference Date 2012-06-27 - 2012-06-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen-kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2012-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures 
Sub Title (in English)  
Keyword(1) GeO2  
Keyword(2) interface  
Keyword(3) light exposure  
Keyword(4) Al2O3  
Keyword(5) Ge  
Keyword(6) plasma  
Keyword(7) air exposure  
Keyword(8)  
1st Author's Name Kusumandari  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Wakana Takeuchi  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Kimihiko Kato  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Shigehisa Shibayama  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Mitsuo Sakashita  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Noriyuki Taoka  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
7th Author's Name Osamu Nakatsuka  
7th Author's Affiliation Nagoya University (Nagoya Univ.)
8th Author's Name Shigeaki Zaima  
8th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2012-06-28 10:00:00 
Presentation Time 15 minutes 
Registration for SDM 
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