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Paper Abstract and Keywords
Presentation 2012-06-28 09:45
Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
Keyword (in Japanese) (See Japanese page) 
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Conference Information
Committee SDM ED  
Conference Date 2012-06-27 - 2012-06-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen-kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2012-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer 
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1st Author's Name Kuniaki Hashimoto  
1st Author's Affiliation Hiroshima University (Hiroshima Univ.)
2nd Author's Name Akio Ohta  
2nd Author's Affiliation Hiroshima University (Hiroshima Univ.)
3rd Author's Name Hideki Murakami  
3rd Author's Affiliation Hiroshima University (Hiroshima Univ.)
4th Author's Name Seiichiro Higashi  
4th Author's Affiliation Hiroshima University (Hiroshima Univ.)
5th Author's Name Seiichi Miyazaki  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
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Date Time 2012-06-28 09:45:00 
Presentation Time 15 minutes 
Registration for SDM 
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