Conference Information |
Committee |
SDM ED |
Conference Date |
2012-06-27 - 2012-06-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Okinawa Seinen-kaikan |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-06-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer |
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1st Author's Name |
Kuniaki Hashimoto |
1st Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
2nd Author's Name |
Akio Ohta |
2nd Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
3rd Author's Name |
Hideki Murakami |
3rd Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
4th Author's Name |
Seiichiro Higashi |
4th Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
5th Author's Name |
Seiichi Miyazaki |
5th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-06-28 09:45:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
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Volume (vol) |
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