| 講演抄録／キーワード |
| 講演名 |
2012-06-29 11:45
Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs
○Tomoko Mizutani・Anil Kumar・Toshiro Hiramoto（Univ. of Tokyo） エレソ技報アーカイブはこちら |
| 抄録 |
（和） |
Distribution of current onset voltage (COV) as well as threshold voltage (VTH) and drain induced barrier lowering (DIBL) in MOSFETs fabricated by 65nm technology is statistically analyzed. Although VTH distribution follows the normal distribution, COV and DIBL deviate from the normal distribution. It is newly found that COV follows the Gumbel distribution, which is known as one of the extreme value distributions. It is considered that the origin of COV variability is random channel potential distribution in channel width direction and COV is determined the deepest potential valley between source and drain. The present results of statistical COV analysis support this model. |
| （英） |
Distribution of current onset voltage (COV) as well as threshold voltage (VTH) and drain induced barrier lowering (DIBL) in MOSFETs fabricated by 65nm technology is statistically analyzed. Although VTH distribution follows the normal distribution, COV and DIBL deviate from the normal distribution. It is newly found that COV follows the Gumbel distribution, which is known as one of the extreme value distributions. It is considered that the origin of COV variability is random channel potential distribution in channel width direction and COV is determined the deepest potential valley between source and drain. The present results of statistical COV analysis support this model. |
| キーワード |
（和） |
/ / / / / / / |
| （英） |
variability / MOS transistor / threshold voltage / DIBL / normal distribution / Gumbel distribution / / |
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