Paper Abstract and Keywords |
Presentation |
2012-06-29 12:15
The Effects of Fluorine Implantation on 1/f noise and reliability characteristics of NMOSFET Jae-Hyung Jang, Hyuk-Min Kwon, Ho-Young Kwak, Sung-Kyu Kwon, Seon-Man Hwang, Jong-Kwan Shin (Chungnam National Univ.), Seung-Yong Sung, Yi-Sun Chung, Da-Soon Lee, Jong-Kon Lee (Magnachip Semiconductor Inc), Hi-Deok Lee (Chungnam National Univ.) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, the effects of fluorine implantation on flicker noise and hot-carrier reliability of N-channel MOSFETs were investigated. Flicker noise of NMOSFET was decreased about 66% by fluorine implantation. However, hot-carrier degradation was enhanced by fluorine implantation, which can be related to the difference of molecular binding within the gate oxide. Therefore, concurrent investigation of hot-carrier reliability and flicker noise is necessary in developing NMOSFETs for analog/digital mixed signal applications. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Fluorine / flicker noise / 1/f noise / reliability / NMOSFET / hot-carrier / / |
Reference Info. |
IEICE Tech. Rep. |
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