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| Presentation | 2012-08-03 13:10 A Fast-Transient-Response Digital Low-Dropout Regulator Comprising Thin-Oxide MOS Transistors in 40-nm CMOS process Masafumi Onouchi, Kazuo Otsuga, Yasuto Igarashi, Toyohito Ikeya, Sadayuki Morita (Renesas Electronics), Koichiro Ishibashi (Univ. of Electro-Comm.), Kazumasa Yanagisawa (Renesas Electronics)  SDM2012-82 ICD2012-50 Link to ES Tech. Rep. Archives: SDM2012-82 ICD2012-50 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A digital low-dropout (LDO) regulator comprising only thin-oxide MOS transistors was developed. The input voltage to the LDO is set to be higher than the nominal overdrive voltage of thin-oxide MOS transistors by applying the proposed overdrive-voltage relaxation scheme. In the LDO, fast transient response can be achieved by applying an output capacitor-less design, which is based on power-MOS features as follows: 1-GHz switching and the small number of levels whereas a wide range of load current (400 $\mu$A - 250 mA) can be covered by applying the proposed power-MOS configuration. The LDO occupies only 0.057 mm$^2$ area using 40-nm CMOS technology, and the measured the transient response time is only 0.07 $\mu$s. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Low-dropout regulator / digital control / fast-transient response / DVFS / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 170, ICD2012-50, pp. 105-110, Aug. 2012. | |
| Paper # | ICD2012-50 | |
| Date of Issue | 2012-07-26 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2012-82 ICD2012-50 Link to ES Tech. Rep. Archives: SDM2012-82 ICD2012-50 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2012-08-02 - 2012-08-03 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Sapporo Center for Gender Equality, Sapporo, Hokkaido |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Low-power, low-voltage device and circuit technology |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2012-08-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Fast-Transient-Response Digital Low-Dropout Regulator Comprising Thin-Oxide MOS Transistors in 40-nm CMOS process |
| Sub Title (in English) | |
| Keyword(1) | Low-dropout regulator |
| Keyword(2) | digital control |
| Keyword(3) | fast-transient response |
| Keyword(4) | DVFS |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Masafumi Onouchi |
| 1st Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 2nd Author's Name | Kazuo Otsuga |
| 2nd Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 3rd Author's Name | Yasuto Igarashi |
| 3rd Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 4th Author's Name | Toyohito Ikeya |
| 4th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 5th Author's Name | Sadayuki Morita |
| 5th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 6th Author's Name | Koichiro Ishibashi |
| 6th Author's Affiliation | The University of Electro-Communications (Univ. of Electro-Comm.) |
| 7th Author's Name | Kazumasa Yanagisawa |
| 7th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
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| Speaker | Author-1 |
| Date Time | 2012-08-03 13:10:00 |
| Presentation Time | 25 minutes |
| Registration for | ICD |
| Paper # | SDM2012-82, ICD2012-50 |
| Volume (vol) | vol.112 |
| Number (no) | no.169(SDM), no.170(ICD) |
| Page | pp.105-110 |
| #Pages | 6 |
| Date of Issue | 2012-07-26 (SDM, ICD) |
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