Paper Abstract and Keywords |
Presentation |
2012-08-03 14:50
[Invited Talk]
A 1V 357Mb/s-Throughput TransferJet(TM) SoC with Embedded Transceiver and Digital Baseband in 90nm CMOS Masahisa Tamura, Fumitaka Kondo, Katsumi Watanabe, Yasunori Aoki, Yusuke Shinohe, Koki Uchino, Yuhei Hashimoto, Fumihiro Nishiyama, Hiroaki Miyachi (Sony), Ikuho Nagase, Itaru Uezono, Rie Hisamura (Sony Semiconductor), Itaru Maekawa (Sony) SDM2012-85 ICD2012-53 Link to ES Tech. Rep. Archives: SDM2012-85 ICD2012-53 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The first SoC for TransferJet(TM) which integrates PHY including an RF transceiver with balun and T/R switch, Connection Layer and SDIO 3.0 device controller occupies 16.2mm2 in a 90nm CMOS process. The SoC achieves a sensitivity of -70dBm at a data rate of 522Mb/s, and an effective throughput of 357Mb/s. From 1V and 1.8V supplies, the SoC consumes 222mW in continuous RX, 109mW in continuous TX and 299$\mu$W average power in intermittent receiving mode. The RX energy efficiency is 0.43nJ/b. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
TransferJet / SoC / CMOS / Close-Proximity Wireless Communication / UWB / Energy Efficiency / Transceiver / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 170, ICD2012-53, pp. 121-125, Aug. 2012. |
Paper # |
ICD2012-53 |
Date of Issue |
2012-07-26 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2012-85 ICD2012-53 Link to ES Tech. Rep. Archives: SDM2012-85 ICD2012-53 |
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