Paper Abstract and Keywords |
Presentation |
2012-11-15 13:00
[Invited Talk]
High Performance SiC Power Devices and Modules
-- Miniaturization of System by Low-Ron and High Temperature Operation -- Takashi Nakamura, Masatoshi Aketa, Yuki Nakano, Takukazu Otsuka, Toshio Hanada (ROHM) SDM2012-100 Link to ES Tech. Rep. Archives: SDM2012-100 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ultra-small power modules with high temperature operation are realized by using low-Ron SiC trench MOSFET. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC Power Device / Trench MOSFET / Power Module / High Temperature Operation / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 290, SDM2012-100, pp. 9-10, Nov. 2012. |
Paper # |
SDM2012-100 |
Date of Issue |
2012-11-08 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-100 Link to ES Tech. Rep. Archives: SDM2012-100 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-11-15 - 2012-11-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
SDM |
Conference Code |
2012-11-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High Performance SiC Power Devices and Modules |
Sub Title (in English) |
Miniaturization of System by Low-Ron and High Temperature Operation |
Keyword(1) |
SiC Power Device |
Keyword(2) |
Trench MOSFET |
Keyword(3) |
Power Module |
Keyword(4) |
High Temperature Operation |
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1st Author's Name |
Takashi Nakamura |
1st Author's Affiliation |
ROHM Co., Ltd. (ROHM) |
2nd Author's Name |
Masatoshi Aketa |
2nd Author's Affiliation |
ROHM Co., Ltd. (ROHM) |
3rd Author's Name |
Yuki Nakano |
3rd Author's Affiliation |
ROHM Co., Ltd. (ROHM) |
4th Author's Name |
Takukazu Otsuka |
4th Author's Affiliation |
ROHM Co., Ltd. (ROHM) |
5th Author's Name |
Toshio Hanada |
5th Author's Affiliation |
ROHM Co., Ltd. (ROHM) |
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Speaker |
Author-1 |
Date Time |
2012-11-15 13:00:00 |
Presentation Time |
50 minutes |
Registration for |
SDM |
Paper # |
SDM2012-100 |
Volume (vol) |
vol.112 |
Number (no) |
no.290 |
Page |
pp.9-10 |
#Pages |
2 |
Date of Issue |
2012-11-08 (SDM) |
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