Paper Abstract and Keywords |
Presentation |
2012-11-29 13:55
Pt/β-Ga2O3 Schottky Barrier Diodes Using Single-Crystal β-Ga2O3 Substrates Kohei Sasaki (Tamura Corp./NICT), Masataka Higashiwaki (NICT/JST), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co.), Shigenobu Yamakoshi (Tamura Corp.) ED2012-71 CPM2012-128 LQE2012-99 Link to ES Tech. Rep. Archives: ED2012-71 CPM2012-128 LQE2012-99 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We fabricated gallium oxide ($Ga_2O_3$) Schottky barrier diodes using $\beta-Ga_2O_3$ (010) single crystal substrates produced by the floating zone. The crystal quality of the substrates was excellent; the X-ray diffraction rocking curve peak had a full width at half maximum of 32 arcsec, and the etch pit density was less than $1\times10^4 cm^{-2}$. The devices exhibited good characteristics, such as an ideality factor close to the unity and a reasonably high reverse breakdown voltage of about 150 V. The Schottky barrier height of the Pt/$\beta-Ga_2O_3$ interface was estimated to be 1.3-1.5 eV. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ga2O3 / Gallium Oxide / Schottky Barrier Diode / Shottky Barrier Height / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 327, ED2012-71, pp. 25-28, Nov. 2012. |
Paper # |
ED2012-71 |
Date of Issue |
2012-11-22 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2012-71 CPM2012-128 LQE2012-99 Link to ES Tech. Rep. Archives: ED2012-71 CPM2012-128 LQE2012-99 |
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