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Paper Abstract and Keywords
Presentation 2012-11-29 13:30
Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction
Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.) ED2012-70 CPM2012-127 LQE2012-98 Link to ES Tech. Rep. Archives: ED2012-70 CPM2012-127 LQE2012-98
Abstract (in Japanese) (See Japanese page) 
(in English) We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diode grown by metalorganic chemical vapor deposition. The tunneling-junction-like band profile of the undoped GaN/undoped AlGaN/n-type GaN (GAG) structure is formed by a spontaneous and piezo polarization effect. We observe negative-differential resistance (NDR) behavior in the diode with the GAG structure. The NDR behavior suggests a possible tunneling junction consisting in the GAG structure.
Keyword (in Japanese) (See Japanese page) 
(in English) tunneling junction / polarization effect / GaN / AlGaN / negative-differential resistance / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 327, ED2012-70, pp. 21-24, Nov. 2012.
Paper # ED2012-70 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2012-70 CPM2012-127 LQE2012-98 Link to ES Tech. Rep. Archives: ED2012-70 CPM2012-127 LQE2012-98

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride and Compound Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction 
Sub Title (in English)  
Keyword(1) tunneling junction  
Keyword(2) polarization effect  
Keyword(3) GaN  
Keyword(4) AlGaN  
Keyword(5) negative-differential resistance  
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Keyword(7)  
Keyword(8)  
1st Author's Name Noriyuki Watanabe  
1st Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
2nd Author's Name Haruki Yokoyama  
2nd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
3rd Author's Name Naoteru Shigekawa  
3rd Author's Affiliation Osaka City University (Osaka City Univ.)
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Speaker Author-1 
Date Time 2012-11-29 13:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2012-70, CPM2012-127, LQE2012-98 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.21-24 
#Pages
Date of Issue 2012-11-22 (ED, CPM, LQE) 


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