Paper Abstract and Keywords |
Presentation |
2012-11-29 13:30
Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.) ED2012-70 CPM2012-127 LQE2012-98 Link to ES Tech. Rep. Archives: ED2012-70 CPM2012-127 LQE2012-98 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diode grown by metalorganic chemical vapor deposition. The tunneling-junction-like band profile of the undoped GaN/undoped AlGaN/n-type GaN (GAG) structure is formed by a spontaneous and piezo polarization effect. We observe negative-differential resistance (NDR) behavior in the diode with the GAG structure. The NDR behavior suggests a possible tunneling junction consisting in the GAG structure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
tunneling junction / polarization effect / GaN / AlGaN / negative-differential resistance / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 327, ED2012-70, pp. 21-24, Nov. 2012. |
Paper # |
ED2012-70 |
Date of Issue |
2012-11-22 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2012-70 CPM2012-127 LQE2012-98 Link to ES Tech. Rep. Archives: ED2012-70 CPM2012-127 LQE2012-98 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2012-11-29 - 2012-11-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Osaka City University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride and Compound Semiconductor Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2012-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction |
Sub Title (in English) |
|
Keyword(1) |
tunneling junction |
Keyword(2) |
polarization effect |
Keyword(3) |
GaN |
Keyword(4) |
AlGaN |
Keyword(5) |
negative-differential resistance |
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1st Author's Name |
Noriyuki Watanabe |
1st Author's Affiliation |
Nippon Telegraph and Telephone Corporation (NTT) |
2nd Author's Name |
Haruki Yokoyama |
2nd Author's Affiliation |
Nippon Telegraph and Telephone Corporation (NTT) |
3rd Author's Name |
Naoteru Shigekawa |
3rd Author's Affiliation |
Osaka City University (Osaka City Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-11-29 13:30:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2012-70, CPM2012-127, LQE2012-98 |
Volume (vol) |
vol.112 |
Number (no) |
no.327(ED), no.328(CPM), no.329(LQE) |
Page |
pp.21-24 |
#Pages |
4 |
Date of Issue |
2012-11-22 (ED, CPM, LQE) |
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