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| Presentation | 2012-11-29 16:15 Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui)  ED2012-76 CPM2012-133 LQE2012-104 Link to ES Tech. Rep. Archives: ED2012-76 CPM2012-133 LQE2012-104 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed higher values at pulsed conditions as compared with DC for SiN passivation, and vice versa for Al2O3, SiO2 and without passivation. The drain current decreased with increasing the on-state time for SiN, which indicated that the most probable location of trap was at the AlGaN layer beneath the gate. Increasing tendency of drain current with increasing on-state time indicated that the surface traps were dominant for this behavior, which was the case for Al2O3, SiO2, and without passivation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN HEMTs / current dispersion / passivation / pulsed IV system / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 327, ED2012-76, pp. 45-50, Nov. 2012. | |
| Paper # | ED2012-76 | |
| Date of Issue | 2012-11-22 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-76 CPM2012-133 LQE2012-104 Link to ES Tech. Rep. Archives: ED2012-76 CPM2012-133 LQE2012-104 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2012-11-29 - 2012-11-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Ｎｉｔｒide and Compound Semiconductor Devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2012-11-ED-LQE-CPM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMTs |
| Keyword(2) | current dispersion |
| Keyword(3) | passivation |
| Keyword(4) | pulsed IV system |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Md. Tanvir Hasan |
| 1st Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 2nd Author's Name | Hirokuni Tokuda |
| 2nd Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 3rd Author's Name | Masaaki Kuzuhara |
| 3rd Author's Affiliation | University of Fukui (Univ. of Fukui) |
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| Speaker | Author-1 |
| Date Time | 2012-11-29 16:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2012-76, CPM2012-133, LQE2012-104 |
| Volume (vol) | vol.112 |
| Number (no) | no.327(ED), no.328(CPM), no.329(LQE) |
| Page | pp.45-50 |
| #Pages | 6 |
| Date of Issue | 2012-11-22 (ED, CPM, LQE) |
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