Paper Abstract and Keywords |
Presentation |
2012-11-29 15:25
Effects of process conditions on AlGaN/GaN hetero-MOS structures Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.) ED2012-74 CPM2012-131 LQE2012-102 Link to ES Tech. Rep. Archives: ED2012-74 CPM2012-131 LQE2012-102 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have characterized effects of process conditions on Al2O3/AlGaN/GaN hetero-MOS structures prepared by atomic layer deposition. A SiN surface protection layer suppressed nitrogen-vacancy-related chemical disorder at the AlGaN surface even during high-temperature annealing, resulting in reduction of the Al2O3/AlGaN interface states. Photo-assisted C–V characteristics of the Al2O3/AlGaN/GaN structures indicated that an N2O-radical treatment was also effective in reducing the Al2O3/AlGaN interface states. The N2O-radical treated MOS-HEMT showed the improvement of transfer characteristics in the positive bias range, probably due to reduction of the Al2O3/AlGaN interface states. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN / Al2O3 / MOS / HEMT / Interface state / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 327, ED2012-74, pp. 37-40, Nov. 2012. |
Paper # |
ED2012-74 |
Date of Issue |
2012-11-22 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2012-74 CPM2012-131 LQE2012-102 Link to ES Tech. Rep. Archives: ED2012-74 CPM2012-131 LQE2012-102 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2012-11-29 - 2012-11-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Osaka City University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride and Compound Semiconductor Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2012-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Effects of process conditions on AlGaN/GaN hetero-MOS structures |
Sub Title (in English) |
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Keyword(1) |
AlGaN/GaN |
Keyword(2) |
Al2O3 |
Keyword(3) |
MOS |
Keyword(4) |
HEMT |
Keyword(5) |
Interface state |
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1st Author's Name |
Yujin Hori |
1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
2nd Author's Name |
Zenji Yatabe |
2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
3rd Author's Name |
Wan-Cheng Ma |
3rd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
4th Author's Name |
Tamotsu Hashizume |
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Hokkaido University (Hokkaido Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-11-29 15:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2012-74, CPM2012-131, LQE2012-102 |
Volume (vol) |
vol.112 |
Number (no) |
no.327(ED), no.328(CPM), no.329(LQE) |
Page |
pp.37-40 |
#Pages |
4 |
Date of Issue |
2012-11-22 (ED, CPM, LQE) |
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