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Paper Abstract and Keywords
Presentation 2012-11-29 15:25
Effects of process conditions on AlGaN/GaN hetero-MOS structures
Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.) ED2012-74 CPM2012-131 LQE2012-102 Link to ES Tech. Rep. Archives: ED2012-74 CPM2012-131 LQE2012-102
Abstract (in Japanese) (See Japanese page) 
(in English) We have characterized effects of process conditions on Al2O3/AlGaN/GaN hetero-MOS structures prepared by atomic layer deposition. A SiN surface protection layer suppressed nitrogen-vacancy-related chemical disorder at the AlGaN surface even during high-temperature annealing, resulting in reduction of the Al2O3/AlGaN interface states. Photo-assisted C–V characteristics of the Al2O3/AlGaN/GaN structures indicated that an N2O-radical treatment was also effective in reducing the Al2O3/AlGaN interface states. The N2O-radical treated MOS-HEMT showed the improvement of transfer characteristics in the positive bias range, probably due to reduction of the Al2O3/AlGaN interface states.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN / Al2O3 / MOS / HEMT / Interface state / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 327, ED2012-74, pp. 37-40, Nov. 2012.
Paper # ED2012-74 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2012-74 CPM2012-131 LQE2012-102 Link to ES Tech. Rep. Archives: ED2012-74 CPM2012-131 LQE2012-102

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride and Compound Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of process conditions on AlGaN/GaN hetero-MOS structures 
Sub Title (in English)  
Keyword(1) AlGaN/GaN  
Keyword(2) Al2O3  
Keyword(3) MOS  
Keyword(4) HEMT  
Keyword(5) Interface state  
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Keyword(8)  
1st Author's Name Yujin Hori  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Zenji Yatabe  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Wan-Cheng Ma  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Tamotsu Hashizume  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2012-11-29 15:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2012-74, CPM2012-131, LQE2012-102 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.37-40 
#Pages
Date of Issue 2012-11-22 (ED, CPM, LQE) 


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