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| Presentation | 2013-01-18 11:15 The study of SSPS GaN amplifier for high-efficiency operation by gate length Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.)  ED2012-121 MW2012-151 Link to ES Tech. Rep. Archives: ED2012-121 MW2012-151 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. 0.25μm gate length GaN HEMT which has high cut-off frequency was used for amplifier. The device has an effect on not only 2nd harmonic but also 3rd harmonic. The matching circuit was designed so that 2nd and 3rd harmonics are tuned to obtain maximum power added efficiency (PAE). PAE of 75% was successfully obtained with 7W output power at 5.8GHz. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | High-voltage techniques / MODFET power amplifiers / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 381, MW2012-151, pp. 49-52, Jan. 2013. | |
| Paper # | MW2012-151 | |
| Date of Issue | 2013-01-10 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-121 MW2012-151 Link to ES Tech. Rep. Archives: ED2012-121 MW2012-151 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2013-01-17 - 2013-01-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC, High-speed and high-frequency devices, Microwave Technologies, etc. |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2013-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The study of SSPS GaN amplifier for high-efficiency operation by gate length |
| Sub Title (in English) | |
| Keyword(1) | High-voltage techniques |
| Keyword(2) | MODFET power amplifiers |
| Keyword(3) | |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Yutaro Yamaguchi |
| 1st Author's Affiliation | Mitsubishi Electric Cooperation (Mitsubishi Electric Corp.) |
| 2nd Author's Name | Toshiyuki Oishi |
| 2nd Author's Affiliation | Mitsubishi Electric Cooperation (Mitsubishi Electric Corp.) |
| 3rd Author's Name | Hiroshi Otsuka |
| 3rd Author's Affiliation | Mitsubishi Electric Cooperation (Mitsubishi Electric Corp.) |
| 4th Author's Name | Takaaki Yoshioka |
| 4th Author's Affiliation | Mitsubishi Electric Cooperation (Mitsubishi Electric Corp.) |
| 5th Author's Name | Hidetoshi Koyama |
| 5th Author's Affiliation | Mitsubishi Electric Cooperation (Mitsubishi Electric Corp.) |
| 6th Author's Name | Fuminori Samejima |
| 6th Author's Affiliation | Mitsubishi Electric Cooperation (Mitsubishi Electric Corp.) |
| 7th Author's Name | Yoshinori Tsuyama |
| 7th Author's Affiliation | Mitsubishi Electric Cooperation (Mitsubishi Electric Corp.) |
| 8th Author's Name | Koji Yamanaka |
| 8th Author's Affiliation | Mitsubishi Electric Cooperation (Mitsubishi Electric Corp.) |
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| Speaker | Author-1 |
| Date Time | 2013-01-18 11:15:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | ED2012-121, MW2012-151 |
| Volume (vol) | vol.112 |
| Number (no) | no.380(ED), no.381(MW) |
| Page | pp.49-52 |
| #Pages | 4 |
| Date of Issue | 2013-01-10 (ED, MW) |
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