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| Presentation | 2013-02-04 15:25 High Reliability Technology of Fine Pitch Re-wiring for High Density Chip Package -- Cu Re-wiring Covering with Metal-Cap Barrier Technology -- Tsuyoshi Kanki, Junya Ikeda, Shoichi Suda, Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Labs)  SDM2012-155 Link to ES Tech. Rep. Archives: SDM2012-155 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In advancing minimization of Cu re-wiring for highly dense chip package at lower cost, the vital technology is to suppress Cu oxidation and corrosion caused with halide ions and organic acids which are produced by hydrolyzing resin. It cannot meet the reliability demands of L/S=3/3µm wiring without completely suppress them. We developed the high reliability technology of fine pitch re-wiring with Metal-Cap barrier by electro-less plating. Especially, CoWP barrier with high concentration of W shows an excellent anti-corrosion property and re-wiring covering with CoWP barrier could meet the reliability demands for L/S=1/1µm. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | High Density Chip Package / Chip-to-Chip Wiring / Re-wiring / Minimization / Reliability / Metal-Cap / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 427, SDM2012-155, pp. 25-30, Feb. 2013. | |
| Paper # | SDM2012-155 | |
| Date of Issue | 2013-01-28 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2012-155 Link to ES Tech. Rep. Archives: SDM2012-155 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2013-02-04 - 2013-02-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2013-02-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Reliability Technology of Fine Pitch Re-wiring for High Density Chip Package |
| Sub Title (in English) | Cu Re-wiring Covering with Metal-Cap Barrier Technology |
| Keyword(1) | High Density Chip Package |
| Keyword(2) | Chip-to-Chip Wiring |
| Keyword(3) | Re-wiring |
| Keyword(4) | Minimization |
| Keyword(5) | Reliability |
| Keyword(6) | Metal-Cap |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tsuyoshi Kanki |
| 1st Author's Affiliation | FUJITSU LABORATORIES LTD (Fujitsu Labs) |
| 2nd Author's Name | Junya Ikeda |
| 2nd Author's Affiliation | FUJITSU LABORATORIES LTD (Fujitsu Labs) |
| 3rd Author's Name | Shoichi Suda |
| 3rd Author's Affiliation | FUJITSU LABORATORIES LTD (Fujitsu Labs) |
| 4th Author's Name | Yasushi Kobayashi |
| 4th Author's Affiliation | FUJITSU LABORATORIES LTD (Fujitsu Labs) |
| 5th Author's Name | Yoshihiro Nakata |
| 5th Author's Affiliation | FUJITSU LABORATORIES LTD (Fujitsu Labs) |
| 6th Author's Name | Tomoji Nakamura |
| 6th Author's Affiliation | FUJITSU LABORATORIES LTD (Fujitsu Labs) |
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| Speaker | Author-1 |
| Date Time | 2013-02-04 15:25:00 |
| Presentation Time | 40 minutes |
| Registration for | SDM |
| Paper # | SDM2012-155 |
| Volume (vol) | vol.112 |
| Number (no) | no.427 |
| Page | pp.25-30 |
| #Pages | 6 |
| Date of Issue | 2013-01-28 (SDM) |
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