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| Presentation | 2013-04-19 11:35 Formation of qualified epitaxial graphene on 6H-SiC(0001) by high temperature annealing in Ar ambient Kazutoshi Funakubo, Shuya Inomata, Ryo Inomata, Goon-Ho Park (Tohoku Univ.), Masato Kotsugi (JASRI), Hirokazu Fukidome, Maki Suemitsu (Tohoku Univ.)  ED2013-15 Link to ES Tech. Rep. Archives: ED2013-15 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Recently, graphene has attracted increasing attention as a new FET channel material to substitute Si. However, the field-effect mobilities reported for graphene FET are far below those that expected by its intrinsic mobility. With an aim at realizing high-mobility graphene FETs by enlargement of the domain size of graphene, we have conducted epitaxial graphene formation on 6H-SiC(0001) by high temperature annealing in Ar ambient. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Graphene / Ar ambient / High temperature annealing / 6H-SiC / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 9, ED2013-15, pp. 59-62, April 2013. | |
| Paper # | ED2013-15 | |
| Date of Issue | 2013-04-11 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2013-15 Link to ES Tech. Rep. Archives: ED2013-15 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2013-04-18 - 2013-04-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Organic Devices, Oxide Devices, and others |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2013-04-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of qualified epitaxial graphene on 6H-SiC(0001) by high temperature annealing in Ar ambient |
| Sub Title (in English) | |
| Keyword(1) | Graphene |
| Keyword(2) | Ar ambient |
| Keyword(3) | High temperature annealing |
| Keyword(4) | 6H-SiC |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kazutoshi Funakubo |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Shuya Inomata |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Ryo Inomata |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Goon-Ho Park |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Masato Kotsugi |
| 5th Author's Affiliation | JASRI (JASRI) |
| 6th Author's Name | Hirokazu Fukidome |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 7th Author's Name | Maki Suemitsu |
| 7th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2013-04-19 11:35:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2013-15 |
| Volume (vol) | vol.113 |
| Number (no) | no.9 |
| Page | pp.59-62 |
| #Pages | 4 |
| Date of Issue | 2013-04-11 (ED) |
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