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| Presentation | 2013-11-28 13:30 Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa (Osaka City Univ.), Manabu Arai (New Japan Radio)  ED2013-68 CPM2013-127 LQE2013-103 Link to ES Tech. Rep. Archives: ED2013-68 CPM2013-127 LQE2013-103 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The physical and electrical properties of p+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by using surface-activated bonding (SAB) were investigated by scanning electron microscopy (SEM), current-voltage (I-V), capacitance-voltage (C-V), and breakdown characteristics measurements. The I-V characteristics of p+-Si/n-4H-SiC junctions showed rectifying properties at room temperature. The flat-band voltage was around 1.0V and the conduction band offset of p+-Si/n-4H-SiC junctions was determined to be ~0.02 eV from the C-V characteristics. The obtained breakdown voltages from the breakdown characteristics corresponded to the electric field of ~0.88 MV/cm (not annealing) and ~2.11 MV/cm (annealing) and these values were higher than critical electric fields at breakdown in bulk Si (~0.3 MV/cm) and in Si-based one-sided abrupt junction (~0.65 MV/cm). | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | surface-activated bonding / Si / SiC / current-voltage characteristics / heterojunction / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 329, ED2013-68, pp. 21-25, Nov. 2013. | |
| Paper # | ED2013-68 | |
| Date of Issue | 2013-11-21 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2013-68 CPM2013-127 LQE2013-103 Link to ES Tech. Rep. Archives: ED2013-68 CPM2013-127 LQE2013-103 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2013-11-28 - 2013-11-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Ｎｉｔｒide and Compound Semiconductor Devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2013-11-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding |
| Sub Title (in English) | |
| Keyword(1) | surface-activated bonding |
| Keyword(2) | Si |
| Keyword(3) | SiC |
| Keyword(4) | current-voltage characteristics |
| Keyword(5) | heterojunction |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shota Nishida |
| 1st Author's Affiliation | Osaka City University (Osaka City Univ.) |
| 2nd Author's Name | Jianbo Liang |
| 2nd Author's Affiliation | Osaka City University (Osaka City Univ.) |
| 3rd Author's Name | Masashi Morimoto |
| 3rd Author's Affiliation | Osaka City University (Osaka City Univ.) |
| 4th Author's Name | Naoteru Shigekawa |
| 4th Author's Affiliation | Osaka City University (Osaka City Univ.) |
| 5th Author's Name | Manabu Arai |
| 5th Author's Affiliation | New Japan Radio Co. (New Japan Radio) |
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| Speaker | Author-1 |
| Date Time | 2013-11-28 13:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2013-68, CPM2013-127, LQE2013-103 |
| Volume (vol) | vol.113 |
| Number (no) | no.329(ED), no.330(CPM), no.331(LQE) |
| Page | pp.21-25 |
| #Pages | 5 |
| Date of Issue | 2013-11-21 (ED, CPM, LQE) |
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