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Paper Abstract and Keywords
Presentation 2013-11-29 15:50
Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator
Shintaro Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2013-87 CPM2013-146 LQE2013-122 Link to ES Tech. Rep. Archives: ED2013-87 CPM2013-146 LQE2013-122
Abstract (in Japanese) (See Japanese page) 
(in English) Capacitance-voltage and current-voltage characteristics have been investigated for n-GaN MIS diodes. ZrO2/Al2O3 laminated films were used as a gate insulator with varying the deposition sequence of each layer. Following results were found: (i) the dielectric constant of the film showed a good agreement with the calculated one which assumed a laminated structure, (ii) the interface state density was determined by the property of up to 5 mono-layers of the dielectric film, and not by the first one layer, and (iii) the forward current became low with increasing the fraction of Al2O3 in the laminated film.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / Al2O3 / ZrO2 / MIS diodes / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 329, ED2013-87, pp. 107-112, Nov. 2013.
Paper # ED2013-87 
Date of Issue 2013-11-21 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2013-87 CPM2013-146 LQE2013-122 Link to ES Tech. Rep. Archives: ED2013-87 CPM2013-146 LQE2013-122

Conference Information
Committee CPM LQE ED  
Conference Date 2013-11-28 - 2013-11-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride and Compound Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2013-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) Al2O3  
Keyword(3) ZrO2  
Keyword(4) MIS diodes  
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1st Author's Name Shintaro Kodama  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Hirokuni Tokuda  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Masaaki Kuzuhara  
3rd Author's Affiliation University of Fukui (Univ. of Fukui)
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Speaker Author-1 
Date Time 2013-11-29 15:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-87, CPM2013-146, LQE2013-122 
Volume (vol) vol.113 
Number (no) no.329(ED), no.330(CPM), no.331(LQE) 
Page pp.107-112 
#Pages
Date of Issue 2013-11-21 (ED, CPM, LQE) 


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