Paper Abstract and Keywords |
Presentation |
2013-11-29 15:50
Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator Shintaro Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2013-87 CPM2013-146 LQE2013-122 Link to ES Tech. Rep. Archives: ED2013-87 CPM2013-146 LQE2013-122 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Capacitance-voltage and current-voltage characteristics have been investigated for n-GaN MIS diodes. ZrO2/Al2O3 laminated films were used as a gate insulator with varying the deposition sequence of each layer. Following results were found: (i) the dielectric constant of the film showed a good agreement with the calculated one which assumed a laminated structure, (ii) the interface state density was determined by the property of up to 5 mono-layers of the dielectric film, and not by the first one layer, and (iii) the forward current became low with increasing the fraction of Al2O3 in the laminated film. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / Al2O3 / ZrO2 / MIS diodes / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 329, ED2013-87, pp. 107-112, Nov. 2013. |
Paper # |
ED2013-87 |
Date of Issue |
2013-11-21 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2013-87 CPM2013-146 LQE2013-122 Link to ES Tech. Rep. Archives: ED2013-87 CPM2013-146 LQE2013-122 |
Conference Information |
Committee |
CPM LQE ED |
Conference Date |
2013-11-28 - 2013-11-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
|
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride and Compound Semiconductor Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2013-11-CPM-LQE-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator |
Sub Title (in English) |
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Keyword(1) |
GaN |
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Al2O3 |
Keyword(3) |
ZrO2 |
Keyword(4) |
MIS diodes |
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1st Author's Name |
Shintaro Kodama |
1st Author's Affiliation |
University of Fukui (Univ. of Fukui) |
2nd Author's Name |
Hirokuni Tokuda |
2nd Author's Affiliation |
University of Fukui (Univ. of Fukui) |
3rd Author's Name |
Masaaki Kuzuhara |
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University of Fukui (Univ. of Fukui) |
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Speaker |
Author-1 |
Date Time |
2013-11-29 15:50:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2013-87, CPM2013-146, LQE2013-122 |
Volume (vol) |
vol.113 |
Number (no) |
no.329(ED), no.330(CPM), no.331(LQE) |
Page |
pp.107-112 |
#Pages |
6 |
Date of Issue |
2013-11-21 (ED, CPM, LQE) |
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