Paper Abstract and Keywords |
Presentation |
2013-12-13 16:40
Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131 Link to ES Tech. Rep. Archives: SDM2013-131 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding approximation and a valence force field model, and investigated the dependence of the electron mobility on orientations and cross-sectional shapes of nanowires. By analyzing the geometry dependence of mobility based on the conduction band structure of Ge nanowires, we showed that the dependence of mobility on wire geometry can be explained by the conduction band structure of Ge nanowires. In addition, [110]-oriented nanowires with larger cross-sectional height along [001] showed the highest electron mobility among several geometries investigated in this study, indicating that such nanowires are suitable as channel material of n-MOSFETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge Nanowire / Electron Mobility / Phonon Scattering / Tight-Binding Approximation / Valence Force Field Model / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 351, SDM2013-131, pp. 91-96, Dec. 2013. |
Paper # |
SDM2013-131 |
Date of Issue |
2013-12-06 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2013-131 Link to ES Tech. Rep. Archives: SDM2013-131 |
Conference Information |
Committee |
SDM |
Conference Date |
2013-12-13 - 2013-12-13 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
NAIST |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si related materials |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires |
Sub Title (in English) |
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Keyword(1) |
Ge Nanowire |
Keyword(2) |
Electron Mobility |
Keyword(3) |
Phonon Scattering |
Keyword(4) |
Tight-Binding Approximation |
Keyword(5) |
Valence Force Field Model |
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1st Author's Name |
Hajime Tanaka |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Seigo Mori |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Naoya Morioka |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
4th Author's Name |
Jun Suda |
4th Author's Affiliation |
Kyoto University (Kyoto Univ.) |
5th Author's Name |
Tsunenobu Kimoto |
5th Author's Affiliation |
Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2013-12-13 16:40:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2013-131 |
Volume (vol) |
vol.113 |
Number (no) |
no.351 |
Page |
pp.91-96 |
#Pages |
6 |
Date of Issue |
2013-12-06 (SDM) |