| Conference Information |
| Committee |
SDM |
| Conference Date |
2013-12-13 - 2013-12-13 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
NAIST |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Fabrication and Characterization of Si related materials |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2013-12-SDM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Data Retention Characteristics of Resistive Random Access Memory Consisting of Transition Metal Oxide |
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| 1st Author's Name |
Masataka Yosihara |
| 1st Author's Affiliation |
Tottori University (Tottori Univ.) |
| 2nd Author's Name |
Ryosuke Ogata |
| 2nd Author's Affiliation |
Tottori University (Tottori Univ.) |
| 3rd Author's Name |
Naohiro Murayama |
| 3rd Author's Affiliation |
Tottori University (Tottori Univ.) |
| 4th Author's Name |
Satoru Kishida |
| 4th Author's Affiliation |
Tottori University/Tottori University Electronic Display Research Center (Tottori Univ./TEDREC) |
| 5th Author's Name |
Kentaro Kinoshita |
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Tottori University/Tottori University Electronic Display Research Center (Tottori Univ./TEDREC) |
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| Speaker |
Author-1 |
| Date Time |
2013-12-13 16:00:00 |
| Presentation Time |
20 minutes |
| Registration for |
SDM |
| Paper # |
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| Volume (vol) |
vol.113 |
| Number (no) |
no.351 |
| Page |
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