Paper Abstract and Keywords |
Presentation |
2013-12-16 13:15
[Invited Talk]
Recent Advances and Applicaitons on Over 100GHz Amplifier Technologies Masaru Sato, Yoichi Kawano, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-91 Link to ES Tech. Rep. Archives: ED2013-91 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recent advances in the process technology of electronics devices have opened the possibility of achieving submillimeter-wave imaging sensors and wireless communication systems. As low noise amplifiers (LNA) are placed at the receiver’s front-end, wide-bandwidth, high-gain and low-noise characteristics are required. In this reports, submillimeter-wave amplifier design methodologies in 75 nm InP HEMTs are reported. Three-stage common-gate amplifiers realizes gains of, 15 dB for D-band, and 10 dB for G-band band by changing output matching inductor of unit amplifier. Moreover, a high gain amplifier is generally difficult to realize in these frequency range, because unwanted feedback power cause unstable operation. Our proposed feedback reduction architecture successfully achieved 30 dB gain at around 230 GHz. A modulator and an envelope detector are also implemented in the amplifier to confirm a large signal operation. Clear eye-opening waveform from the detector output can be successfully obtained for 10 Gb/s data signal. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Common-gate amplifier / Feedback reduction / InP HEMT / Submillimeter-wave / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 357, ED2013-91, pp. 7-11, Dec. 2013. |
Paper # |
ED2013-91 |
Date of Issue |
2013-12-09 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2013-91 Link to ES Tech. Rep. Archives: ED2013-91 |
Conference Information |
Committee |
ED |
Conference Date |
2013-12-16 - 2013-12-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Research Institute of Electrical Communication Tohoku University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Millimeter wave, terahertz wave devices and systems |
Paper Information |
Registration To |
ED |
Conference Code |
2013-12-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Recent Advances and Applicaitons on Over 100GHz Amplifier Technologies |
Sub Title (in English) |
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Keyword(1) |
Common-gate amplifier |
Keyword(2) |
Feedback reduction |
Keyword(3) |
InP HEMT |
Keyword(4) |
Submillimeter-wave |
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1st Author's Name |
Masaru Sato |
1st Author's Affiliation |
Fujitsu Limited (Fujitsu) |
2nd Author's Name |
Yoichi Kawano |
2nd Author's Affiliation |
Fujitsu Limited (Fujitsu) |
3rd Author's Name |
Shoichi Shiba |
3rd Author's Affiliation |
Fujitsu Limited (Fujitsu) |
4th Author's Name |
Hiroshi Matsumura |
4th Author's Affiliation |
Fujitsu Limited (Fujitsu) |
5th Author's Name |
Tsuyoshi Takahashi |
5th Author's Affiliation |
Fujitsu Limited (Fujitsu) |
6th Author's Name |
Toshihide Suzuki |
6th Author's Affiliation |
Fujitsu Limited (Fujitsu) |
7th Author's Name |
Yasuhiro Nakasha |
7th Author's Affiliation |
Fujitsu Limited (Fujitsu) |
8th Author's Name |
Naoki Hara |
8th Author's Affiliation |
Fujitsu Limited (Fujitsu) |
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Speaker |
Author-1 |
Date Time |
2013-12-16 13:15:00 |
Presentation Time |
40 minutes |
Registration for |
ED |
Paper # |
ED2013-91 |
Volume (vol) |
vol.113 |
Number (no) |
no.357 |
Page |
pp.7-11 |
#Pages |
5 |
Date of Issue |
2013-12-09 (ED) |
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