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Paper Abstract and Keywords
Presentation 2013-12-16 13:15
[Invited Talk] Recent Advances and Applicaitons on Over 100GHz Amplifier Technologies
Masaru Sato, Yoichi Kawano, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-91 Link to ES Tech. Rep. Archives: ED2013-91
Abstract (in Japanese) (See Japanese page) 
(in English) Recent advances in the process technology of electronics devices have opened the possibility of achieving submillimeter-wave imaging sensors and wireless communication systems. As low noise amplifiers (LNA) are placed at the receiver’s front-end, wide-bandwidth, high-gain and low-noise characteristics are required. In this reports, submillimeter-wave amplifier design methodologies in 75 nm InP HEMTs are reported. Three-stage common-gate amplifiers realizes gains of, 15 dB for D-band, and 10 dB for G-band band by changing output matching inductor of unit amplifier. Moreover, a high gain amplifier is generally difficult to realize in these frequency range, because unwanted feedback power cause unstable operation. Our proposed feedback reduction architecture successfully achieved 30 dB gain at around 230 GHz. A modulator and an envelope detector are also implemented in the amplifier to confirm a large signal operation. Clear eye-opening waveform from the detector output can be successfully obtained for 10 Gb/s data signal.
Keyword (in Japanese) (See Japanese page) 
(in English) Common-gate amplifier / Feedback reduction / InP HEMT / Submillimeter-wave / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 357, ED2013-91, pp. 7-11, Dec. 2013.
Paper # ED2013-91 
Date of Issue 2013-12-09 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-91 Link to ES Tech. Rep. Archives: ED2013-91

Conference Information
Committee ED  
Conference Date 2013-12-16 - 2013-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Research Institute of Electrical Communication Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave, terahertz wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2013-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Recent Advances and Applicaitons on Over 100GHz Amplifier Technologies 
Sub Title (in English)  
Keyword(1) Common-gate amplifier  
Keyword(2) Feedback reduction  
Keyword(3) InP HEMT  
Keyword(4) Submillimeter-wave  
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1st Author's Name Masaru Sato  
1st Author's Affiliation Fujitsu Limited (Fujitsu)
2nd Author's Name Yoichi Kawano  
2nd Author's Affiliation Fujitsu Limited (Fujitsu)
3rd Author's Name Shoichi Shiba  
3rd Author's Affiliation Fujitsu Limited (Fujitsu)
4th Author's Name Hiroshi Matsumura  
4th Author's Affiliation Fujitsu Limited (Fujitsu)
5th Author's Name Tsuyoshi Takahashi  
5th Author's Affiliation Fujitsu Limited (Fujitsu)
6th Author's Name Toshihide Suzuki  
6th Author's Affiliation Fujitsu Limited (Fujitsu)
7th Author's Name Yasuhiro Nakasha  
7th Author's Affiliation Fujitsu Limited (Fujitsu)
8th Author's Name Naoki Hara  
8th Author's Affiliation Fujitsu Limited (Fujitsu)
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Speaker Author-1 
Date Time 2013-12-16 13:15:00 
Presentation Time 40 minutes 
Registration for ED 
Paper # ED2013-91 
Volume (vol) vol.113 
Number (no) no.357 
Page pp.7-11 
#Pages
Date of Issue 2013-12-09 (ED) 


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