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Paper Abstract and Keywords
Presentation 2014-02-27 15:40
Operating characteristics of partial-resonant push-pull converter employing SiC-BGSIT
Tatsuhiro Funatsu, Tetsuro Tanaka (Kagoshima Univ.) EE2013-57 CPM2013-158 Link to ES Tech. Rep. Archives: CPM2013-158
Abstract (in Japanese) (See Japanese page) 
(in English) SiC-BGSIT (Buried Gate Static Induction Transistor) has the advantage Si-MOSFET of high breakdown voltage and low on state resistance. and moreover, SiC-BGSIT has high switching speed equal to that of Si-MOSFET. We report results are dynamics and steady-state characteristics of partial-resonant push-pull converter employing normally-on SiC-BGSIT and employing Si-MOSFET. We compared SiC-BGSIT with Si-MOSFET.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / BGSIT / voltage-resonant / partial-resonant / push-pull converter / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 444, EE2013-57, pp. 49-54, Feb. 2014.
Paper # EE2013-57 
Date of Issue 2014-02-20 (EE, CPM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EE2013-57 CPM2013-158 Link to ES Tech. Rep. Archives: CPM2013-158

Conference Information
Committee EE CPM  
Conference Date 2014-02-27 - 2014-02-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EE 
Conference Code 2014-02-EE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Operating characteristics of partial-resonant push-pull converter employing SiC-BGSIT 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) BGSIT  
Keyword(3) voltage-resonant  
Keyword(4) partial-resonant  
Keyword(5) push-pull converter  
1st Author's Name Tatsuhiro Funatsu  
1st Author's Affiliation Kagoshima University (Kagoshima Univ.)
2nd Author's Name Tetsuro Tanaka  
2nd Author's Affiliation Kagoshima University (Kagoshima Univ.)
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Speaker Author-1 
Date Time 2014-02-27 15:40:00 
Presentation Time 30 minutes 
Registration for EE 
Paper # EE2013-57, CPM2013-158 
Volume (vol) vol.113 
Number (no) no.444(EE), no.445(CPM) 
Page pp.49-54 
Date of Issue 2014-02-20 (EE, CPM) 

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