Paper Abstract and Keywords |
Presentation |
2014-05-28 16:30
Chemical Vapor Deposition of Silicon Nitride Films Enhanced by Surface-Wave Plasma and Electron Device Application Kyohei Kawakami, Takahiro Ishimaru, Masatoshi Shinohara, Hiroshi Okada (Toyohashi Tech), Masakzu Furukawa (Aries Research Group), Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech) ED2014-29 CPM2014-12 SDM2014-27 Link to ES Tech. Rep. Archives: ED2014-29 CPM2014-12 SDM2014-27 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
New chemical vapor deposition technique using surface-wave plasma is proposed, and silicon nitride film deposition is made. Deposition condition for silicon nitride deposition based-on bis(dimethylamino)dimethylsilane precursor is investigated. The method is applied on AlGaN/GaN high electron mobility transistor (HEMT) structure, and its effectiveness for surface passivation is confirmed by electrical characterization. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
surface-wave plasma / chemical vapor deposition / silicon nitride / AlGaN/GaN / surface passivation / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 56, ED2014-29, pp. 55-58, May 2014. |
Paper # |
ED2014-29 |
Date of Issue |
2014-05-21 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
ED2014-29 CPM2014-12 SDM2014-27 Link to ES Tech. Rep. Archives: ED2014-29 CPM2014-12 SDM2014-27 |
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