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Paper Abstract and Keywords
Presentation 2014-08-21 11:15
Lateral current injection DFB laser on Si/SiO2 substrate
Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka (NTT) R2014-25 EMD2014-30 CPM2014-45 OPE2014-55 LQE2014-29 Link to ES Tech. Rep. Archives: EMD2014-30 CPM2014-45 OPE2014-55 LQE2014-29
Abstract (in Japanese) (See Japanese page) 
(in English) Membrane lasers with buried heterostructure are expected to obtain extremely small operating energy because of the enhancement of optical and carrier confinements. Therefore, these lasers are suitable for use the light sources in datacom and computercom applications. In this context, we have developed DFB laser on SiO2/Si substrate for datacom application by combining direct bonding and regrowth techniques. The DFB laser exhibits a threshold current of 1.8 mA and clear eye-opening with 25.8-Gbit/s NRZ signal when the bias current is 8.0 mA.
Keyword (in Japanese) (See Japanese page) 
(in English) DFB laser / laser on Si / lateral pin junction / / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 187, LQE2014-29, pp. 13-16, Aug. 2014.
Paper # LQE2014-29 
Date of Issue 2014-08-14 (R, EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF R2014-25 EMD2014-30 CPM2014-45 OPE2014-55 LQE2014-29 Link to ES Tech. Rep. Archives: EMD2014-30 CPM2014-45 OPE2014-55 LQE2014-29

Conference Information
Committee EMD LQE OPE CPM R  
Conference Date 2014-08-21 - 2014-08-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Otaru Economy Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2014-08-EMD-LQE-OPE-CPM-R 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Lateral current injection DFB laser on Si/SiO2 substrate 
Sub Title (in English)  
Keyword(1) DFB laser  
Keyword(2) laser on Si  
Keyword(3) lateral pin junction  
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1st Author's Name Shinji Matsuo  
1st Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
2nd Author's Name Takuro Fujii  
2nd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
3rd Author's Name Koichi Hasebe  
3rd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
4th Author's Name Koji Takeda  
4th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
5th Author's Name Tomonari Sato  
5th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
6th Author's Name Takaaki Kakitsuka  
6th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
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Speaker Author-1 
Date Time 2014-08-21 11:15:00 
Presentation Time 20 minutes 
Registration for LQE 
Paper # R2014-25, EMD2014-30, CPM2014-45, OPE2014-55, LQE2014-29 
Volume (vol) vol.114 
Number (no) no.183(R), no.184(EMD), no.185(CPM), no.186(OPE), no.187(LQE) 
Page pp.13-16 
#Pages
Date of Issue 2014-08-14 (R, EMD, CPM, OPE, LQE) 


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