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| Presentation | 2014-08-21 16:00 Fabrication and High-Temperature Operation of InAs/GaAs Quantum Dot Lasers on Silicon by Wafer Bonding Katsuaki Tanabe, Yasuhiko Arakawa (Univ. of Tokyo)  R2014-32 EMD2014-37 CPM2014-52 OPE2014-62 LQE2014-36 Link to ES Tech. Rep. Archives: EMD2014-37 CPM2014-52 OPE2014-62 LQE2014-36 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We are developing high-performance on-chip light sources utilizing semiconductor quantum dots towards the realization of silicon photonics-electronics integrated circuits. In our present work, we have observed over-100ºC lasing temperatures for 1.3 um InAs/GaAs quantum dot lasers on Si substrates fabricated by wafer bonding, by an incorporation of p-type doping in the InAs/GaAs quantum-dot core layers. The characteristics temperature T0 has been found as high as infinity and 180 K around room temperature and 100ºC, respectively. We have furthermore succeeded in the fabrication and over-100ºC operation of InAs/GaAs quantum dot lasers on Si waveguide structures. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Semiconductor Laser / Quantum Dot / Wafer Bonding / Silicon Photonics / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 187, LQE2014-36, pp. 51-54, Aug. 2014. | |
| Paper # | LQE2014-36 | |
| Date of Issue | 2014-08-14 (R, EMD, CPM, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | R2014-32 EMD2014-37 CPM2014-52 OPE2014-62 LQE2014-36 Link to ES Tech. Rep. Archives: EMD2014-37 CPM2014-52 OPE2014-62 LQE2014-36 |
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| Conference Information | |
| Committee | EMD LQE OPE CPM R |
| Conference Date | 2014-08-21 - 2014-08-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Otaru Economy Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2014-08-EMD-LQE-OPE-CPM-R |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and High-Temperature Operation of InAs/GaAs Quantum Dot Lasers on Silicon by Wafer Bonding |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor Laser |
| Keyword(2) | Quantum Dot |
| Keyword(3) | Wafer Bonding |
| Keyword(4) | Silicon Photonics |
| Keyword(5) | |
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| Keyword(8) | |
| 1st Author's Name | Katsuaki Tanabe |
| 1st Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Yasuhiko Arakawa |
| 2nd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2014-08-21 16:00:00 |
| Presentation Time | 20 minutes |
| Registration for | LQE |
| Paper # | R2014-32, EMD2014-37, CPM2014-52, OPE2014-62, LQE2014-36 |
| Volume (vol) | vol.114 |
| Number (no) | no.183(R), no.184(EMD), no.185(CPM), no.186(OPE), no.187(LQE) |
| Page | pp.51-54 |
| #Pages | 4 |
| Date of Issue | 2014-08-14 (R, EMD, CPM, OPE, LQE) |
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