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| Presentation | 2014-09-05 10:45 RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma P. Pungboon Pansila, Kensaku Kanomata, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.)  CPM2014-86 Link to ES Tech. Rep. Archives: CPM2014-86 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Gallium oxide is expected as a channel material for thin film transistors. In the conventional technologies, gallium oxide has been tried to be fabricated by atomic layer deposition (ALD) at high temperatures from 100-450 °C, although the room-temperature (RT) growth has not been developed. In this work, we developed the RT ALD of gallium oxide by using a remote plasma technique. We studied trimethylgallium (TMG) adsorption and its oxidization on gallium oxide surfaces at RT by infrared absorption spectroscopy (IRAS). Based on the adsorption and oxidization characteristics, we designed the room temperature ALD of Ga2O3. The IRAS indicated that TMG adsorbs on the gallium oxide surface by consuming the adsorption sites of surface hydroxyl groups even at RT and the remote plasma-excited water and oxygen vapor is effective in oxidizing the TMG adsorbed surface as well as regeneration of the adsorption sites for TMG. We successfully prepared Ga2O3 films on Si-substrates at RT with a growth per cycle of 0.042 nm/cycle. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | gallium oxide / trimethylgallium / remote plasma / IR absorption spectroscopy / adsorption / oxidization / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 202, CPM2014-86, pp. 59-64, Sept. 2014. | |
| Paper # | CPM2014-86 | |
| Date of Issue | 2014-08-28 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2014-86 Link to ES Tech. Rep. Archives: CPM2014-86 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2014-09-04 - 2014-09-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | The 100th Anniversary Hall, Yamagata University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2014-09-CPM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma |
| Sub Title (in English) | |
| Keyword(1) | gallium oxide |
| Keyword(2) | trimethylgallium |
| Keyword(3) | remote plasma |
| Keyword(4) | IR absorption spectroscopy |
| Keyword(5) | adsorption |
| Keyword(6) | oxidization |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | P. Pungboon Pansila |
| 1st Author's Affiliation | Yamagata University (Yamagata Univ.) |
| 2nd Author's Name | Kensaku Kanomata |
| 2nd Author's Affiliation | Yamagata University (Yamagata Univ.) |
| 3rd Author's Name | Bashir Ahmmad Arima |
| 3rd Author's Affiliation | Yamagata University (Yamagata Univ.) |
| 4th Author's Name | Shigeru Kubota |
| 4th Author's Affiliation | Yamagata University (Yamagata Univ.) |
| 5th Author's Name | Fumihiko Hirose |
| 5th Author's Affiliation | Yamagata University (Yamagata Univ.) |
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| Speaker | Author-1 |
| Date Time | 2014-09-05 10:45:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2014-86 |
| Volume (vol) | vol.114 |
| Number (no) | no.202 |
| Page | pp.59-64 |
| #Pages | 6 |
| Date of Issue | 2014-08-28 (CPM) |
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