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Paper Abstract and Keywords
Presentation 2014-10-22 09:25
Effect of Laser irradiation on Electron Emission from Silicon Field Emitter Arrays
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2014-69 Link to ES Tech. Rep. Archives: ED2014-69
Abstract (in Japanese) (See Japanese page) 
(in English) The field emission properties of silicon field emitter arrays with submicron gate aperture have been investigated under irradiation of laser light pulses with the wavelengths of 405 nm. The increase of the emission current under light illumination is proportional to the emission current in the dark. The significant influence of the polarization in photoassisted emission for each wavelength was not observed. The rise time of the photoresponse in the Si-FEA is at least on nanosecond scale. This indicates that the gated field emitter structure designed with gate aperture less than a half micrometer blocks effectively excitation of diffusion electrons outside the depletion region which causes slow response.
Keyword (in Japanese) (See Japanese page) 
(in English) photoassisted electron emission / modulated electron beam / Si-FEA / / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 262, ED2014-69, pp. 35-38, Oct. 2014.
Paper # ED2014-69 
Date of Issue 2014-10-14 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-69 Link to ES Tech. Rep. Archives: ED2014-69

Conference Information
Committee ED  
Conference Date 2014-10-21 - 2014-10-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. (Faculty House Trillium) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Electron Tube, Vacuum Nanoelectronics, and Their Characterization Techniques 
Paper Information
Registration To ED 
Conference Code 2014-10-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Laser irradiation on Electron Emission from Silicon Field Emitter Arrays 
Sub Title (in English)  
Keyword(1) photoassisted electron emission  
Keyword(2) modulated electron beam  
Keyword(3) Si-FEA  
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1st Author's Name Hidetaka Shimawaki  
1st Author's Affiliation Hachinohe Institute of Technology (Hachinohe Inst. of Tech.)
2nd Author's Name Masayoshi Nagao  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Yoichiro Neo  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Hidenori Mimura  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Fujio Wakaya  
5th Author's Affiliation Osaka University (Osaka Univ.)
6th Author's Name Mikio Takai  
6th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2014-10-22 09:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2014-69 
Volume (vol) vol.114 
Number (no) no.262 
Page pp.35-38 
#Pages
Date of Issue 2014-10-14 (ED) 


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