Paper Abstract and Keywords |
Presentation |
2014-10-30 17:45
Fabrication of membrane lasers by epitaxial growth of InP using InP-based active layer film on SiO2/Si substrate Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo (NTT) OCS2014-68 OPE2014-112 LQE2014-86 Link to ES Tech. Rep. Archives: OPE2014-112 LQE2014-86 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Integration of III-V lasers on a Si substrate is the key to realizing large-scale photonic integrated circuits (PICs) using silicon (Si) device fabrication technologies. We have therefore developed membrane buried heterostructure lasers on SiO2/Si by epitaxial growth on an InP-based membrane including multiple quantum well, which is directly bonded to a SiO2/Si substrate. There was no degradation of the crystal quality even after the high-temperature annealing. We have successfully fabricated the compact DFB laser with a 120-$mu$m-long cavity on SiO2, and also experimentally confirmed that the room temperature continuous wave emission at a threshold current of 1.8 mA and the direct modulation of 40-Gbit/s NRZ were achieved. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Epitaxial growth / DFB laser / Direct bonding / Si photonics / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 283, LQE2014-86, pp. 135-140, Oct. 2014. |
Paper # |
LQE2014-86 |
Date of Issue |
2014-10-23 (OCS, OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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OCS2014-68 OPE2014-112 LQE2014-86 Link to ES Tech. Rep. Archives: OPE2014-112 LQE2014-86 |
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