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Paper Abstract and Keywords
Presentation 2014-10-30 17:45
Fabrication of membrane lasers by epitaxial growth of InP using InP-based active layer film on SiO2/Si substrate
Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo (NTT) OCS2014-68 OPE2014-112 LQE2014-86 Link to ES Tech. Rep. Archives: OPE2014-112 LQE2014-86
Abstract (in Japanese) (See Japanese page) 
(in English) Integration of III-V lasers on a Si substrate is the key to realizing large-scale photonic integrated circuits (PICs) using silicon (Si) device fabrication technologies. We have therefore developed membrane buried heterostructure lasers on SiO2/Si by epitaxial growth on an InP-based membrane including multiple quantum well, which is directly bonded to a SiO2/Si substrate. There was no degradation of the crystal quality even after the high-temperature annealing. We have successfully fabricated the compact DFB laser with a 120-$mu$m-long cavity on SiO2, and also experimentally confirmed that the room temperature continuous wave emission at a threshold current of 1.8 mA and the direct modulation of 40-Gbit/s NRZ were achieved.
Keyword (in Japanese) (See Japanese page) 
(in English) Epitaxial growth / DFB laser / Direct bonding / Si photonics / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 283, LQE2014-86, pp. 135-140, Oct. 2014.
Paper # LQE2014-86 
Date of Issue 2014-10-23 (OCS, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF OCS2014-68 OPE2014-112 LQE2014-86 Link to ES Tech. Rep. Archives: OPE2014-112 LQE2014-86

Conference Information
Committee OCS OPE LQE  
Conference Date 2014-10-30 - 2014-10-31 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagasaki Museum of History and Culture 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2014-10-OCS-OPE-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of membrane lasers by epitaxial growth of InP using InP-based active layer film on SiO2/Si substrate 
Sub Title (in English)  
Keyword(1) Epitaxial growth  
Keyword(2) DFB laser  
Keyword(3) Direct bonding  
Keyword(4) Si photonics  
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1st Author's Name Takuro Fujii  
1st Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
2nd Author's Name Tomonari Sato  
2nd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
3rd Author's Name Koji Takeda  
3rd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
4th Author's Name Koichi Hasebe  
4th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
5th Author's Name Takaaki Kakitsuka  
5th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
6th Author's Name Shinji Matsuo  
6th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
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Speaker Author-1 
Date Time 2014-10-30 17:45:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # OCS2014-68, OPE2014-112, LQE2014-86 
Volume (vol) vol.114 
Number (no) no.281(OCS), no.282(OPE), no.283(LQE) 
Page pp.135-140 
#Pages
Date of Issue 2014-10-23 (OCS, OPE, LQE) 


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