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| Presentation | 2014-10-30 13:15 Gain Characteristics and Piezoelectric effect of 1550nm-Band QD-SOA Grown on InP(311)B Substrate for Ultra-Fast All-Optical Logic Gate Devices Atsushi Matsumoto (NICT), Yuki Takei (Waseda Univ.), Kouichi Akahane (NICT), Hiroshi Ishikawa, Yuichi Matsushima, Katsuyuki Utaka (Waseda Univ.)  OCS2014-58 OPE2014-102 LQE2014-76 Link to ES Tech. Rep. Archives: OPE2014-102 LQE2014-76 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, we fabricated the QD-SOA consisting of the 20-layer-stacked QDs structure with the strain-compensation technique for the purpose of all optical logic gate device, and measured the fundamental characteristics of the QD-SOA. Investigating the difference between experimental and the simulation results, we obtained another experimental results indicating the piezoelectric effect. And we found that the amplitude of piezoelectric field was restricted by the strain-compensation technique, and it was about 25 kV/cm. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Optical Logic Gate / Quantum Dot / Semiconductor Optical Amplifier / Piezoelectric effect / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 281, OCS2014-58, pp. 87-91, Oct. 2014. | |
| Paper # | OCS2014-58 | |
| Date of Issue | 2014-10-23 (OCS, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OCS2014-58 OPE2014-102 LQE2014-76 Link to ES Tech. Rep. Archives: OPE2014-102 LQE2014-76 |
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| Conference Information | |
| Committee | OCS OPE LQE |
| Conference Date | 2014-10-30 - 2014-10-31 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagasaki Museum of History and Culture |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | OCS |
| Conference Code | 2014-10-OCS-OPE-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Gain Characteristics and Piezoelectric effect of 1550nm-Band QD-SOA Grown on InP(311)B Substrate for Ultra-Fast All-Optical Logic Gate Devices |
| Sub Title (in English) | |
| Keyword(1) | Optical Logic Gate |
| Keyword(2) | Quantum Dot |
| Keyword(3) | Semiconductor Optical Amplifier |
| Keyword(4) | Piezoelectric effect |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Atsushi Matsumoto |
| 1st Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 2nd Author's Name | Yuki Takei |
| 2nd Author's Affiliation | Waseda University (Waseda Univ.) |
| 3rd Author's Name | Kouichi Akahane |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 4th Author's Name | Hiroshi Ishikawa |
| 4th Author's Affiliation | Waseda University (Waseda Univ.) |
| 5th Author's Name | Yuichi Matsushima |
| 5th Author's Affiliation | Waseda University (Waseda Univ.) |
| 6th Author's Name | Katsuyuki Utaka |
| 6th Author's Affiliation | Waseda University (Waseda Univ.) |
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| Speaker | Author-1 |
| Date Time | 2014-10-30 13:15:00 |
| Presentation Time | 25 minutes |
| Registration for | OCS |
| Paper # | OCS2014-58, OPE2014-102, LQE2014-76 |
| Volume (vol) | vol.114 |
| Number (no) | no.281(OCS), no.282(OPE), no.283(LQE) |
| Page | pp.87-91 |
| #Pages | 5 |
| Date of Issue | 2014-10-23 (OCS, OPE, LQE) |
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