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| Presentation | 2014-11-27 11:25 Critical thickness for phase separation in MOVPE-grown thick InGaN Kazuki Kodama, Tanvir Md Hasan, Hiroyuki Nomura (Univ. of Fukui), Naoteru Shigekawa (Osaka City Univ.), Akio Yamamoto, Masaaki Kuzuhara (Univ. of Fukui)  ED2014-75 CPM2014-132 LQE2014-103 Link to ES Tech. Rep. Archives: ED2014-75 CPM2014-132 LQE2014-103 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | This paper reports phase separation in thick (~1 μm) MOVPE InxGa1-xN (x = 0.2~0.4) films grown by MOVPE at 570~750℃ on AlN/Si(111), α-Al2O3(0001), and GaN/α-Al2O3(0001) substrates. Phase separation occurs when InGaN thickness exceeds a critical value. Critical thickness of phase separation is markedly increased with decreasing growth temperature. It is around 0.2 μm for a film grown at 750℃, while it is more than 1μm for that grown at 570℃. No substrate dependencies are found in critical thickness. The cross-sectional SEM views of grown films show that phase separation is initiated at the middle part of an InGaN film and extended to the area near the substrate. SIMS analysis shows a possibility that phase separation is initiated at a part with a relatively large In/Ga ratio fluctuations in InGaN films. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaN / MOVPE / phase separation / critical thickness / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 338, LQE2014-103, pp. 9-14, Nov. 2014. | |
| Paper # | LQE2014-103 | |
| Date of Issue | 2014-11-20 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2014-75 CPM2014-132 LQE2014-103 Link to ES Tech. Rep. Archives: ED2014-75 CPM2014-132 LQE2014-103 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2014-11-27 - 2014-11-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2014-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Critical thickness for phase separation in MOVPE-grown thick InGaN |
| Sub Title (in English) | |
| Keyword(1) | InGaN |
| Keyword(2) | MOVPE |
| Keyword(3) | phase separation |
| Keyword(4) | critical thickness |
| Keyword(5) | |
| Keyword(6) | |
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| 1st Author's Name | Kazuki Kodama |
| 1st Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 2nd Author's Name | Tanvir Md Hasan |
| 2nd Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 3rd Author's Name | Hiroyuki Nomura |
| 3rd Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 4th Author's Name | Naoteru Shigekawa |
| 4th Author's Affiliation | Osaka City University (Osaka City Univ.) |
| 5th Author's Name | Akio Yamamoto |
| 5th Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 6th Author's Name | Masaaki Kuzuhara |
| 6th Author's Affiliation | University of Fukui (Univ. of Fukui) |
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| Speaker | Author-1 |
| Date Time | 2014-11-27 11:25:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2014-75, CPM2014-132, LQE2014-103 |
| Volume (vol) | vol.114 |
| Number (no) | no.336(ED), no.337(CPM), no.338(LQE) |
| Page | pp.9-14 |
| #Pages | 6 |
| Date of Issue | 2014-11-20 (ED, CPM, LQE) |
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