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| Presentation | 2014-12-12 13:00 Evaluation of photoconductivities of n-ch, p-ch, pin-ch poly-Si TFPTs Takahiro Fuchiya, Yoshiharu Maeda, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ)  EID2014-21 SDM2014-116 Link to ES Tech. Rep. Archives: EID2014-21 SDM2014-116 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have evaluated photoconductivities of n-ch, p-ch, and pin-ch poly-Si TFPTs for photosensor application. It was observed that the photo-induced electric current is: pin-ch with the gate terminal connected to n-region > n-ch > pin-ch with the gate terminal connected to p-region > p-ch. Moreover, we have analyzed electron density (n), hole density (p), and recombination rate of the n-ch, p-ch, and pin-ch poly-Si TFPTs using device simulation. It was suggested that the difference of photo-induced electric current is caused by the difference of the recombination rate. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | n-ch / p-ch / pin-ch / poly-Si / TFPT / Photo-induced electric current / Device simulation / Recombination rate | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 360, SDM2014-116, pp. 41-44, Dec. 2014. | |
| Paper # | SDM2014-116 | |
| Date of Issue | 2014-12-05 (EID, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2014-21 SDM2014-116 Link to ES Tech. Rep. Archives: EID2014-21 SDM2014-116 |
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| Conference Information | |
| Committee | SDM EID |
| Conference Date | 2014-12-12 - 2014-12-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si and Si-related Materials and Devices, Display Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-12-SDM-EID |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of photoconductivities of n-ch, p-ch, pin-ch poly-Si TFPTs |
| Sub Title (in English) | |
| Keyword(1) | n-ch |
| Keyword(2) | p-ch |
| Keyword(3) | pin-ch |
| Keyword(4) | poly-Si |
| Keyword(5) | TFPT |
| Keyword(6) | Photo-induced electric current |
| Keyword(7) | Device simulation |
| Keyword(8) | Recombination rate |
| 1st Author's Name | Takahiro Fuchiya |
| 1st Author's Affiliation | Ryukoku University (Ryukoku Univ) |
| 2nd Author's Name | Yoshiharu Maeda |
| 2nd Author's Affiliation | Ryukoku University (Ryukoku Univ) |
| 3rd Author's Name | Takayuki Kadonome |
| 3rd Author's Affiliation | Ryukoku University (Ryukoku Univ) |
| 4th Author's Name | Takumi Tanaka |
| 4th Author's Affiliation | Ryukoku University (Ryukoku Univ) |
| 5th Author's Name | Tokiyoshi Matsuda |
| 5th Author's Affiliation | Ryukoku University (Ryukoku Univ) |
| 6th Author's Name | Mutsumi Kimura |
| 6th Author's Affiliation | Ryukoku University (Ryukoku Univ) |
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| Speaker | Author-1 |
| Date Time | 2014-12-12 13:00:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | EID2014-21, SDM2014-116 |
| Volume (vol) | vol.114 |
| Number (no) | no.359(EID), no.360(SDM) |
| Page | pp.41-44 |
| #Pages | 4 |
| Date of Issue | 2014-12-05 (EID, SDM) |
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