Paper Abstract and Keywords |
Presentation |
2015-03-05 10:45
[Invited Talk]
An S-Band GaN High Efficiency Power Amplifier with Harmonic Processing Keigo Nakatani, Toshio Ishizaki (Ryukoku Univ.) MW2014-204 ICD2014-117 Link to ES Tech. Rep. Archives: MW2014-204 ICD2014-117 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this report, a 2.45GHz high efficiency power amplifier, fabricated for the Student Design Competition in Asia-Pacific Microwave Conference (APMC2014), is described. The authors designed and fabricated an amplifier with a load circuit for processing second and third harmonics. In the output matching circuit, impedance conversion is achieved by using quarter-wavelength transmission lines in order to obtain a broadband and low loss performance. Based on this design policy, a power amplifier was fabricated. Output power of 41.0dBm, associated gain of 16.8dB, drain efficiency of 68.6% and power added efficiency of 67.2% were successfully obtained at 2.43GHz. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN-HEMT / High efficiency power amplifier / Harmonic processing / Class-F / Inverse Class-F / S-Bnad / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 498, MW2014-204, pp. 13-17, March 2015. |
Paper # |
MW2014-204 |
Date of Issue |
2015-02-26 (MW, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
MW2014-204 ICD2014-117 Link to ES Tech. Rep. Archives: MW2014-204 ICD2014-117 |
Conference Information |
Committee |
MW ICD |
Conference Date |
2015-03-05 - 2015-03-06 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
University of Fukui |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Microwave Integrated Circuit / Microwave Technologies |
Paper Information |
Registration To |
MW |
Conference Code |
2015-03-MW-ICD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
An S-Band GaN High Efficiency Power Amplifier with Harmonic Processing |
Sub Title (in English) |
|
Keyword(1) |
GaN-HEMT |
Keyword(2) |
High efficiency power amplifier |
Keyword(3) |
Harmonic processing |
Keyword(4) |
Class-F |
Keyword(5) |
Inverse Class-F |
Keyword(6) |
S-Bnad |
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Keyword(8) |
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1st Author's Name |
Keigo Nakatani |
1st Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
2nd Author's Name |
Toshio Ishizaki |
2nd Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2015-03-05 10:45:00 |
Presentation Time |
20 minutes |
Registration for |
MW |
Paper # |
MW2014-204, ICD2014-117 |
Volume (vol) |
vol.114 |
Number (no) |
no.498(MW), no.499(ICD) |
Page |
pp.13-17 |
#Pages |
5 |
Date of Issue |
2015-02-26 (MW, ICD) |
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