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Paper Abstract and Keywords
Presentation 2015-04-17 09:55
Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
Kensaku Kanomata, Hisashi Ohba, P. Pungboon Pansila, Bashir Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2015-11 Link to ES Tech. Rep. Archives: ED2015-11
Abstract (in Japanese) (See Japanese page) 
(in English) Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (TEMAH) and plasma-excited water and oxygen vapor generated from a remote plasma source. The plasma-excited water and oxygen vapor is effective in oxidizing the TEMAH-adsorbed HfO2 surface while leaving OH sites on the growing surface at room temperature for further TEMAH adsorption. The growth rate is measured to be 0.26 nm/cycle at room temperature. The TEMAH adsorption and its oxidation on HfO2 were investigated by multiple-internal-refraction infrared absorption spectroscopy (MIR-IRAS). In thin work, we constructed a reaction model of the RT HfO2 ALD by MIR-IRAS and adsorption site fitting.
Keyword (in Japanese) (See Japanese page) 
(in English) ALD / TEMAH / Plasma-excited H2O and O2 / MIR-IRAS / Plasma optical spectroscopy / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 5, ED2015-11, pp. 53-58, April 2015.
Paper # ED2015-11 
Date of Issue 2015-04-09 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-11 Link to ES Tech. Rep. Archives: ED2015-11

Conference Information
Committee ED  
Conference Date 2015-04-16 - 2015-04-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Laboratory for Nanoelectronics and Spintronics 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2015-04-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen 
Sub Title (in English)  
Keyword(1) ALD  
Keyword(2) TEMAH  
Keyword(3) Plasma-excited H2O and O2  
Keyword(4) MIR-IRAS  
Keyword(5) Plasma optical spectroscopy  
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1st Author's Name Kensaku Kanomata  
1st Author's Affiliation Yamagata University (Yamagata Univ.)
2nd Author's Name Hisashi Ohba  
2nd Author's Affiliation Yamagata University (Yamagata Univ.)
3rd Author's Name P. Pungboon Pansila  
3rd Author's Affiliation Yamagata University (Yamagata Univ.)
4th Author's Name Bashir Ahmmad Arima  
4th Author's Affiliation Yamagata University (Yamagata Univ.)
5th Author's Name Shigeru Kubota  
5th Author's Affiliation Yamagata University (Yamagata Univ.)
6th Author's Name Kazuhiro Hirahara  
6th Author's Affiliation Yamagata University (Yamagata Univ.)
7th Author's Name Fumihiko Hirose  
7th Author's Affiliation Yamagata University (Yamagata Univ.)
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Speaker Author-1 
Date Time 2015-04-17 09:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-11 
Volume (vol) vol.115 
Number (no) no.5 
Page pp.53-58 
#Pages
Date of Issue 2015-04-09 (ED) 


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