Paper Abstract and Keywords |
Presentation |
2015-04-17 09:55
Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen Kensaku Kanomata, Hisashi Ohba, P. Pungboon Pansila, Bashir Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2015-11 Link to ES Tech. Rep. Archives: ED2015-11 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (TEMAH) and plasma-excited water and oxygen vapor generated from a remote plasma source. The plasma-excited water and oxygen vapor is effective in oxidizing the TEMAH-adsorbed HfO2 surface while leaving OH sites on the growing surface at room temperature for further TEMAH adsorption. The growth rate is measured to be 0.26 nm/cycle at room temperature. The TEMAH adsorption and its oxidation on HfO2 were investigated by multiple-internal-refraction infrared absorption spectroscopy (MIR-IRAS). In thin work, we constructed a reaction model of the RT HfO2 ALD by MIR-IRAS and adsorption site fitting. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ALD / TEMAH / Plasma-excited H2O and O2 / MIR-IRAS / Plasma optical spectroscopy / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 5, ED2015-11, pp. 53-58, April 2015. |
Paper # |
ED2015-11 |
Date of Issue |
2015-04-09 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2015-11 Link to ES Tech. Rep. Archives: ED2015-11 |