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| Presentation | 2015-04-29 17:05 Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang (Kochi Univ. of Tech.)  SDM2015-8 OME2015-8 Link to ES Tech. Rep. Archives: SDM2015-8 OME2015-8 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Effets of fluorine in In-Ga-Zn-O on defect passivation and reliability improvement of thin-film transistor have been investigated. Fluorine contained silicon nitride (SiNx:F) was used as a passivation layer of the IGZO TFT. We found that reliability of the IGZO TFT dramatically improved when fluorine diffused into an IGZO channel through post-fabrication annealing. The fluorine-passivated IGZO TFT has enhanced operation temperature, and is advantageous for achieving highly reliable oxide TFTs for next-generation displays. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | In-Ga-Zn-O (IGZO) / thin-film transistor (TFT) / fluorine / defect passivation / reliability / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 18, SDM2015-8, pp. 31-34, April 2015. | |
| Paper # | SDM2015-8 | |
| Date of Issue | 2015-04-22 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2015-8 OME2015-8 Link to ES Tech. Rep. Archives: SDM2015-8 OME2015-8 |
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| Conference Information | |
| Committee | OME SDM |
| Conference Date | 2015-04-29 - 2015-04-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Oh-hama Nobumoto Memorial Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin FIlms, Functional Electronics Devices, New Functional Materials and Evaluation, BIomtechnology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2015-04-OME-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors |
| Sub Title (in English) | |
| Keyword(1) | In-Ga-Zn-O (IGZO) |
| Keyword(2) | thin-film transistor (TFT) |
| Keyword(3) | fluorine |
| Keyword(4) | defect passivation |
| Keyword(5) | reliability |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Mamoru Furuta |
| 1st Author's Affiliation | Kochi University of Technology (Kochi Univ. of Tech.) |
| 2nd Author's Name | Jingxin Jiang |
| 2nd Author's Affiliation | Kochi University of Technology (Kochi Univ. of Tech.) |
| 3rd Author's Name | Gengo Tatsuoka |
| 3rd Author's Affiliation | Kochi University of Technology (Kochi Univ. of Tech.) |
| 4th Author's Name | Dapeng Wang |
| 4th Author's Affiliation | Kochi University of Technology (Kochi Univ. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2015-04-29 17:05:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2015-8, OME2015-8 |
| Volume (vol) | vol.115 |
| Number (no) | no.18(SDM), no.19(OME) |
| Page | pp.31-34 |
| #Pages | 4 |
| Date of Issue | 2015-04-22 (SDM, OME) |
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