Paper Abstract and Keywords |
Presentation |
2015-05-22 11:25
High Sensitivity Image Sensor Overlaid with Thin-Film Crystalline Selenium/Gallium Oxide Heterojunction Photodiode Shigeyuki Imura, Kenji Kikuchi, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota (NHK), Tokio Nakada (TUS), Toru Okino, Yutaka Hirose, Yoshihisa Kato (Panasonic), Nobukazu Teranishi (University of Hyogo) LQE2015-13 Link to ES Tech. Rep. Archives: LQE2015-13 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed an stacked image sensor using a thin-film crystalline selenium (c-Se) as a photoconversion layer. The dark current was significantly decreased by applying an n-type wide-band-gap gallium oxide (Ga2O3) layer as a high hole-barrier against injected carriers. We herein present the first high-resolution images obtained with such a device by changing the thickness of c-Se films to decrease a size of particles much smaller than the pixel size. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CMOS image sensor / crystalline selenium / gallium oxide / heterojunction photodiode / dark current / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 46, LQE2015-13, pp. 63-67, May 2015. |
Paper # |
LQE2015-13 |
Date of Issue |
2015-05-14 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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LQE2015-13 Link to ES Tech. Rep. Archives: LQE2015-13 |