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Paper Abstract and Keywords
Presentation 2015-05-22 11:25
High Sensitivity Image Sensor Overlaid with Thin-Film Crystalline Selenium/Gallium Oxide Heterojunction Photodiode
Shigeyuki Imura, Kenji Kikuchi, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota (NHK), Tokio Nakada (TUS), Toru Okino, Yutaka Hirose, Yoshihisa Kato (Panasonic), Nobukazu Teranishi (University of Hyogo) LQE2015-13 Link to ES Tech. Rep. Archives: LQE2015-13
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed an stacked image sensor using a thin-film crystalline selenium (c-Se) as a photoconversion layer. The dark current was significantly decreased by applying an n-type wide-band-gap gallium oxide (Ga2O3) layer as a high hole-barrier against injected carriers. We herein present the first high-resolution images obtained with such a device by changing the thickness of c-Se films to decrease a size of particles much smaller than the pixel size.
Keyword (in Japanese) (See Japanese page) 
(in English) CMOS image sensor / crystalline selenium / gallium oxide / heterojunction photodiode / dark current / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 46, LQE2015-13, pp. 63-67, May 2015.
Paper # LQE2015-13 
Date of Issue 2015-05-14 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2015-13 Link to ES Tech. Rep. Archives: LQE2015-13

Conference Information
Committee LQE LSJ  
Conference Date 2015-05-21 - 2015-05-22 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2015-05-LQE-LSJ 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High Sensitivity Image Sensor Overlaid with Thin-Film Crystalline Selenium/Gallium Oxide Heterojunction Photodiode 
Sub Title (in English)  
Keyword(1) CMOS image sensor  
Keyword(2) crystalline selenium  
Keyword(3) gallium oxide  
Keyword(4) heterojunction photodiode  
Keyword(5) dark current  
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Keyword(8)  
1st Author's Name Shigeyuki Imura  
1st Author's Affiliation Japan Broadcasting Corporation (NHK)
2nd Author's Name Kenji Kikuchi  
2nd Author's Affiliation Japan Broadcasting Corporation (NHK)
3rd Author's Name Kazunori Miyakawa  
3rd Author's Affiliation Japan Broadcasting Corporation (NHK)
4th Author's Name Hiroshi Ohtake  
4th Author's Affiliation Japan Broadcasting Corporation (NHK)
5th Author's Name Misao Kubota  
5th Author's Affiliation Japan Broadcasting Corporation (NHK)
6th Author's Name Tokio Nakada  
6th Author's Affiliation Tokyo University of Science (TUS)
7th Author's Name Toru Okino  
7th Author's Affiliation Panasonic Corporation (Panasonic)
8th Author's Name Yutaka Hirose  
8th Author's Affiliation Panasonic Corporation (Panasonic)
9th Author's Name Yoshihisa Kato  
9th Author's Affiliation Panasonic Corporation (Panasonic)
10th Author's Name Nobukazu Teranishi  
10th Author's Affiliation University of Hyogo (University of Hyogo)
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Speaker Author-1 
Date Time 2015-05-22 11:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2015-13 
Volume (vol) vol.115 
Number (no) no.46 
Page pp.63-67 
#Pages
Date of Issue 2015-05-14 (LQE) 


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