Paper Abstract and Keywords |
Presentation |
2015-06-19 16:50
[Invited Lecture]
Electrostatically-controllable polarity of transistors on atomically-thin films Shu Nakaharai (NIMS), Tomohiko Iijima, Shinichi Ogawa, Katsunori Yagi, Naoki Harada, Kenjiro Hayashi, Daiyu Kondo, Makoto Takahashi (AIST), Songlin Li, Mahito Yamamoto, Yen-Fu Lin (NIMS), Keiji Ueno (Saitama Univ.), Kazuhito Tsukagoshi (NIMS), Shintaro Sato, Naoki Yokoyama (AIST) SDM2015-55 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report our recent works on our novel concept transistors on atomically-thin films graphene and similar semiconductors. Especially, a new kind of transistors in which transistor polarity (p- and n-type) was electrostatically controlled were developed by taking the advantages of atomically-thin films. Here we demonstrate fabrication and operation of such devices on graphene and a transition metal dichalcogenide semiconductor material. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
atomically-thin film / graphene / transition metal dichalcogenide / transistor / polarity control / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 108, SDM2015-55, pp. 93-98, June 2015. |
Paper # |
SDM2015-55 |
Date of Issue |
2015-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2015-55 |