Paper Abstract and Keywords |
Presentation |
2015-11-06 13:30
[Invited Talk]
GaN-based devices on Si substrates for power conversion systems Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90 Link to ES Tech. Rep. Archives: SDM2015-90 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable highly efficient power switching systems. Technical issues have been mostly solved for the commercialization so far and the remaining tasks are to find more suitable applications and extract the full potential of the superior material properties. In this paper, we present state-of-the-art GaN-based power switching devices on cost-effective Si substrates and their applications to power switching systems. High quality AlGaN/GaN hetero-structures can be epitaxially grown on large diameter Si substrate utilizing novel buffer layers including AlN/GaN super-lattices which relax the strain by the lattice and thermal mismatches. The electron mobility at the channel reaches 2000cm2/Vs demonstrating the good crystal quality. A novel device structure called Gate Injection Transistor (GIT) serving normally-off operation is proposed and enables highly reliable system operations free from the current collapse up to 600V. A LLC resonant converter used in isolated DC-DC converter enables 1MHz operation with high efficiency of 96.5% by the GaN devices, which cannot be operated by conventional Si power devices. The above results demonstrate very promising potentials of GaN based power switching transistors. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Gallium Nitride / Power Transistor / High Breakdown Voltage / Low On-state Resistance / Switching / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 292, SDM2015-90, pp. 35-38, Nov. 2015. |
Paper # |
SDM2015-90 |
Date of Issue |
2015-10-29 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2015-90 Link to ES Tech. Rep. Archives: SDM2015-90 |
Conference Information |
Committee |
SDM |
Conference Date |
2015-11-05 - 2015-11-06 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process, Device, and Circuit Simulation, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2015-11-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
GaN-based devices on Si substrates for power conversion systems |
Sub Title (in English) |
|
Keyword(1) |
Gallium Nitride |
Keyword(2) |
Power Transistor |
Keyword(3) |
High Breakdown Voltage |
Keyword(4) |
Low On-state Resistance |
Keyword(5) |
Switching |
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Hidetoshi Ishida |
1st Author's Affiliation |
Panasonic Corporation (Panasonic) |
2nd Author's Name |
Masahiro Ishida |
2nd Author's Affiliation |
Panasonic Corporation (Panasonic) |
3rd Author's Name |
Tetsuzo Ueda |
3rd Author's Affiliation |
Panasonic Corporation (Panasonic) |
4th Author's Name |
|
4th Author's Affiliation |
() |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2015-11-06 13:30:00 |
Presentation Time |
50 minutes |
Registration for |
SDM |
Paper # |
SDM2015-90 |
Volume (vol) |
vol.115 |
Number (no) |
no.292 |
Page |
pp.35-38 |
#Pages |
4 |
Date of Issue |
2015-10-29 (SDM) |
|