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Paper Abstract and Keywords
Presentation 2015-11-06 13:30
[Invited Talk] GaN-based devices on Si substrates for power conversion systems
Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90 Link to ES Tech. Rep. Archives: SDM2015-90
Abstract (in Japanese) (See Japanese page) 
(in English) GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable highly efficient power switching systems. Technical issues have been mostly solved for the commercialization so far and the remaining tasks are to find more suitable applications and extract the full potential of the superior material properties. In this paper, we present state-of-the-art GaN-based power switching devices on cost-effective Si substrates and their applications to power switching systems. High quality AlGaN/GaN hetero-structures can be epitaxially grown on large diameter Si substrate utilizing novel buffer layers including AlN/GaN super-lattices which relax the strain by the lattice and thermal mismatches. The electron mobility at the channel reaches 2000cm2/Vs demonstrating the good crystal quality. A novel device structure called Gate Injection Transistor (GIT) serving normally-off operation is proposed and enables highly reliable system operations free from the current collapse up to 600V. A LLC resonant converter used in isolated DC-DC converter enables 1MHz operation with high efficiency of 96.5% by the GaN devices, which cannot be operated by conventional Si power devices. The above results demonstrate very promising potentials of GaN based power switching transistors.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium Nitride / Power Transistor / High Breakdown Voltage / Low On-state Resistance / Switching / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 292, SDM2015-90, pp. 35-38, Nov. 2015.
Paper # SDM2015-90 
Date of Issue 2015-10-29 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-90 Link to ES Tech. Rep. Archives: SDM2015-90

Conference Information
Committee SDM  
Conference Date 2015-11-05 - 2015-11-06 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, and Circuit Simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2015-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN-based devices on Si substrates for power conversion systems 
Sub Title (in English)  
Keyword(1) Gallium Nitride  
Keyword(2) Power Transistor  
Keyword(3) High Breakdown Voltage  
Keyword(4) Low On-state Resistance  
Keyword(5) Switching  
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Keyword(8)  
1st Author's Name Hidetoshi Ishida  
1st Author's Affiliation Panasonic Corporation (Panasonic)
2nd Author's Name Masahiro Ishida  
2nd Author's Affiliation Panasonic Corporation (Panasonic)
3rd Author's Name Tetsuzo Ueda  
3rd Author's Affiliation Panasonic Corporation (Panasonic)
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Speaker Author-1 
Date Time 2015-11-06 13:30:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2015-90 
Volume (vol) vol.115 
Number (no) no.292 
Page pp.35-38 
#Pages
Date of Issue 2015-10-29 (SDM) 


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