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Paper Abstract and Keywords
Presentation 2015-11-19 14:50
Observation of Power MOSFET under UIS avalanche breakdown condition using thermoreflectance image mapping
Koichi Endo (Toshiba Corp.), Tomonori Nakamura (Hamamatsu Photonics K.K.), Koji Nakamae (Osaka Univ.) R2015-58
Abstract (in Japanese) (See Japanese page) 
(in English) We investigate the temperature variation of the top surface image of power metal-oxide semiconductor field effect transistor (MOSFET) under unclamped inductive switching (UIS) conditions. We perform measurements using the optical probed thermoreflectance image mapping. (OPTIM) technique (using electro optical frequency mapping: EOFM). The measured data obtained by the thermoreflectance mapping was found to be sensitive to changes in temperature as opposed to the temperature distribution. These results suggest that the OPTIM method is better able to measure the heat generation distribution, because it has a higher time-resolution than that of thermography.
Keyword (in Japanese) (See Japanese page) 
(in English) Power Device / Electro-Optical Probing (EO Probing) / reflectivity / Thermal Observation / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 313, R2015-58, pp. 11-16, Nov. 2015.
Paper # R2015-58 
Date of Issue 2015-11-12 (R) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee R  
Conference Date 2015-11-19 - 2015-11-19 
Place (in Japanese) (See Japanese page) 
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Paper Information
Registration To R 
Conference Code 2015-11-R 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Observation of Power MOSFET under UIS avalanche breakdown condition using thermoreflectance image mapping 
Sub Title (in English)  
Keyword(1) Power Device  
Keyword(2) Electro-Optical Probing (EO Probing)  
Keyword(3) reflectivity  
Keyword(4) Thermal Observation  
1st Author's Name Koichi Endo  
1st Author's Affiliation Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Tomonori Nakamura  
2nd Author's Affiliation Hamamatsu Photonics K.K. (Hamamatsu Photonics K.K.)
3rd Author's Name Koji Nakamae  
3rd Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2015-11-19 14:50:00 
Presentation Time 25 minutes 
Registration for R 
Paper # R2015-58 
Volume (vol) vol.115 
Number (no) no.313 
Page pp.11-16 
Date of Issue 2015-11-12 (R) 

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