Paper Abstract and Keywords |
Presentation |
2015-11-19 14:50
Observation of Power MOSFET under UIS avalanche breakdown condition using thermoreflectance image mapping Koichi Endo (Toshiba Corp.), Tomonori Nakamura (Hamamatsu Photonics K.K.), Koji Nakamae (Osaka Univ.) R2015-58 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We investigate the temperature variation of the top surface image of power metal-oxide semiconductor field effect transistor (MOSFET) under unclamped inductive switching (UIS) conditions. We perform measurements using the optical probed thermoreflectance image mapping. (OPTIM) technique (using electro optical frequency mapping: EOFM). The measured data obtained by the thermoreflectance mapping was found to be sensitive to changes in temperature as opposed to the temperature distribution. These results suggest that the OPTIM method is better able to measure the heat generation distribution, because it has a higher time-resolution than that of thermography. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Power Device / Electro-Optical Probing (EO Probing) / reflectivity / Thermal Observation / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 313, R2015-58, pp. 11-16, Nov. 2015. |
Paper # |
R2015-58 |
Date of Issue |
2015-11-12 (R) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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R2015-58 |
Conference Information |
Committee |
R |
Conference Date |
2015-11-19 - 2015-11-19 |
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Paper Information |
Registration To |
R |
Conference Code |
2015-11-R |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Observation of Power MOSFET under UIS avalanche breakdown condition using thermoreflectance image mapping |
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Keyword(1) |
Power Device |
Keyword(2) |
Electro-Optical Probing (EO Probing) |
Keyword(3) |
reflectivity |
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Thermal Observation |
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1st Author's Name |
Koichi Endo |
1st Author's Affiliation |
Toshiba Corporation (Toshiba Corp.) |
2nd Author's Name |
Tomonori Nakamura |
2nd Author's Affiliation |
Hamamatsu Photonics K.K. (Hamamatsu Photonics K.K.) |
3rd Author's Name |
Koji Nakamae |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2015-11-19 14:50:00 |
Presentation Time |
25 minutes |
Registration for |
R |
Paper # |
R2015-58 |
Volume (vol) |
vol.115 |
Number (no) |
no.313 |
Page |
pp.11-16 |
#Pages |
6 |
Date of Issue |
2015-11-12 (R) |