Paper Abstract and Keywords |
Presentation |
2015-11-26 16:30
Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers Ryosuke Ishido, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2015-79 CPM2015-114 LQE2015-111 Link to ES Tech. Rep. Archives: ED2015-79 CPM2015-114 LQE2015-111 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Resonant Raman scattering spectroscopy is crucially useful in studying properties of light-emitting devices. However, it is difficult to measure pure Raman spectra from light emitters because Raman signals may overlap with luminescence. In this report, we propose “Multi-wavelength excited Raman scattering spectroscopy”, where Raman spectra acquired with slightly different excitation wavelengths are subtracted each other. This method can eliminate luminescence components from the experimentally obtained Raman spectra. We successfully obtain InGaN Raman signals with this method and visualize the spatial distribution of In composition. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Indium gallium nitride / Raman scattering / / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 331, LQE2015-111, pp. 59-62, Nov. 2015. |
Paper # |
LQE2015-111 |
Date of Issue |
2015-11-19 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2015-79 CPM2015-114 LQE2015-111 Link to ES Tech. Rep. Archives: ED2015-79 CPM2015-114 LQE2015-111 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2015-11-26 - 2015-11-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Osaka City University Media Center |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Semiconductor Devices, Materials, Related Technologies |
Paper Information |
Registration To |
LQE |
Conference Code |
2015-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers |
Sub Title (in English) |
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Keyword(1) |
Indium gallium nitride |
Keyword(2) |
Raman scattering |
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1st Author's Name |
Ryosuke Ishido |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Ryota Ishii |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Mitsuru Funato |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
4th Author's Name |
Yoichi Kawakami |
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Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2015-11-26 16:30:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2015-79, CPM2015-114, LQE2015-111 |
Volume (vol) |
vol.115 |
Number (no) |
no.329(ED), no.330(CPM), no.331(LQE) |
Page |
pp.59-62 |
#Pages |
4 |
Date of Issue |
2015-11-19 (ED, CPM, LQE) |
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