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| Presentation | 2015-12-21 13:45 Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT)  ED2015-92 Link to ES Tech. Rep. Archives: ED2015-92 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, 100, 77 and 16 K and clarified the effect of temperature on improvement of DC and RF performance. The obvious kink phenomenon is seen in the drain-source current vs. drain-source voltage (Ids-Vds) characteristics with decreasing temperature. The maximum transconductance gm increases with decreasing temperature between 300 and 77 K and shows the almost same value at 100 and 77 K. At 16 K, the decrease in gm is seen. The decrease in gm at 16 K may result from the kink phenomenon. Cutoff frequency fT and maximum oscillation frequency fmax increase with decreasing temperature. The increase of fmax with decreasing temperature is more than that of fT. The fmax largely increases between 150 and 100 K. Furthermore, the increase of fT and fmax values is very small between 77 and 16 K. This suggests that operating InP HEMTs at 77 K is sufficient to increase fT and fmax values. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HEMTs / InP / InAlAs/InGaAs / Cryogenic characteristics / Transconductance / Cutoff frequency / Maximum oscillation frequency / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 387, ED2015-92, pp. 7-11, Dec. 2015. | |
| Paper # | ED2015-92 | |
| Date of Issue | 2015-12-14 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-92 Link to ES Tech. Rep. Archives: ED2015-92 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2015-12-21 - 2015-12-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2015-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs |
| Sub Title (in English) | |
| Keyword(1) | HEMTs |
| Keyword(2) | InP |
| Keyword(3) | InAlAs/InGaAs |
| Keyword(4) | Cryogenic characteristics |
| Keyword(5) | Transconductance |
| Keyword(6) | Cutoff frequency |
| Keyword(7) | Maximum oscillation frequency |
| Keyword(8) | |
| 1st Author's Name | Akira Endoh |
| 1st Author's Affiliation | National Institute of Information and Communications Technology/Fujitsu Laboratories Ltd. (NICT/Fujitsu Labs.) |
| 2nd Author's Name | Issei Watanabe |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 3rd Author's Name | Akifumi Kasamatsu |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 4th Author's Name | Tsuyoshi Takahashi |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 5th Author's Name | Shoichi Shiba |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 6th Author's Name | Yasuhiro Nakasha |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 7th Author's Name | Taisuke Iwai |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 8th Author's Name | Takashi Mimura |
| 8th Author's Affiliation | Fujitsu Laboratories Ltd./National Institute of Information and Communications Technology (Fujitsu Labs./NICT) |
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| Speaker | Author-1 |
| Date Time | 2015-12-21 13:45:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-92 |
| Volume (vol) | vol.115 |
| Number (no) | no.387 |
| Page | pp.7-11 |
| #Pages | 5 |
| Date of Issue | 2015-12-14 (ED) |
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