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| Presentation | 2016-10-26 14:00 [Invited Talk] Controlling Metallic Contamination in Advanced ULSI Processing Koichiro Saga (Sony)  SDM2016-69 Link to ES Tech. Rep. Archives: SDM2016-69 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Metal impurities dissolved in silicon can cause “recombination centers”, which degrade retention characteristics of DRAMs, produce dark current in CMOS image sensors, and cause leakage of current in high-voltage transistors. In consideration of these problems, methods of controlling metallic contamination (including the removal, prevention, and gettering) in advanced ULSI manufacturing are reviewed. In particular, for controlling yield of the devices, the better understanding of the behavior and electrical activities of metal impurities diffusing in and penetrating into silicon is important. The gettering design based on the physical properties of metal species is also proposed. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | metallic contamination / transition metals / contamination / cleaning / oxygen precipitates / recombination center / diffusion / gettering | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 270, SDM2016-69, pp. 1-8, Oct. 2016. | |
| Paper # | SDM2016-69 | |
| Date of Issue | 2016-10-19 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2016-69 Link to ES Tech. Rep. Archives: SDM2016-69 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2016-10-26 - 2016-10-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2016-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Controlling Metallic Contamination in Advanced ULSI Processing |
| Sub Title (in English) | |
| Keyword(1) | metallic contamination |
| Keyword(2) | transition metals |
| Keyword(3) | contamination |
| Keyword(4) | cleaning |
| Keyword(5) | oxygen precipitates |
| Keyword(6) | recombination center |
| Keyword(7) | diffusion |
| Keyword(8) | gettering |
| 1st Author's Name | Koichiro Saga |
| 1st Author's Affiliation | Sony Semiconductor Solutions Corporation (Sony) |
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| Speaker | Author-1 |
| Date Time | 2016-10-26 14:00:00 |
| Presentation Time | 50 minutes |
| Registration for | SDM |
| Paper # | SDM2016-69 |
| Volume (vol) | vol.116 |
| Number (no) | no.270 |
| Page | pp.1-8 |
| #Pages | 8 |
| Date of Issue | 2016-10-19 (SDM) |
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