Paper Abstract and Keywords |
Presentation |
2016-12-13 10:05
Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-70 CPM2016-103 LQE2016-86 Link to ES Tech. Rep. Archives: ED2016-70 CPM2016-103 LQE2016-86 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. However, previously reported structures have a problem that In-rich InGaN QWs for longer wavelendth emission are fabricated on the (0001) polar plane, where the optical transition probability is low due to polarization-induced internal electric fields. In this study, 3D-structured QWs are fabricated on the {11-22} semipolar GaN substrates. We demonstrate the fabrication of polar plane-free three-dimensional structures and polychromatic emission from the structures. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
nitride semiconductor / metal-organic vapor phase epitaxy (MOVPE) / three-dimensional structures / polychromatic emission / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 358, LQE2016-86, pp. 67-70, Dec. 2016. |
Paper # |
LQE2016-86 |
Date of Issue |
2016-12-05 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2016-70 CPM2016-103 LQE2016-86 Link to ES Tech. Rep. Archives: ED2016-70 CPM2016-103 LQE2016-86 |
Conference Information |
Committee |
CPM LQE ED |
Conference Date |
2016-12-12 - 2016-12-13 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride semiconductors, optoelectronic devices, and related materials |
Paper Information |
Registration To |
LQE |
Conference Code |
2016-12-CPM-LQE-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells |
Sub Title (in English) |
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Keyword(1) |
nitride semiconductor |
Keyword(2) |
metal-organic vapor phase epitaxy (MOVPE) |
Keyword(3) |
three-dimensional structures |
Keyword(4) |
polychromatic emission |
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1st Author's Name |
Yoshinobu Matsuda |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Mitsuru Funato |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Yoichi Kawakami |
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Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2016-12-13 10:05:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2016-70, CPM2016-103, LQE2016-86 |
Volume (vol) |
vol.116 |
Number (no) |
no.356(ED), no.357(CPM), no.358(LQE) |
Page |
pp.67-70 |
#Pages |
4 |
Date of Issue |
2016-12-05 (ED, CPM, LQE) |
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