Paper Abstract and Keywords |
Presentation |
2016-12-16 11:40
[Memorial Lecture]
Determination of internal quantum efficiency and recombination lifetime by simultaneous photo-acoustic and photoluminescence measurements in GaN Kohei Kawakami, Takashi Nakano, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.) LQE2016-99 Link to ES Tech. Rep. Archives: LQE2016-99 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect-density, and the assumption is not necessarily valid. In this study, we have developed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and have demonstratively evaluated the IQE values for various GaN samples. The results show that the conventional method cannot give accurate IQE values for low-quality samples although it can be valid for high-quality samples, and that our method can always give accurate values. Furthermore, we have performed time-resolved PL measurements for the GaN samples and have estimated radiative and non-radiative recombination lifetimes by using the reliable IQE values estimated by the simultaneous PL/PA measurements, and it is found that radiative lifetime in GaN increases in proportion to the 1.5th power of temperature and that non-radiative lifetime shows little temperature dependence although the non-radiative lifetime itself largely depends on sample quality. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Nitride / GaN / PAS / IQE / Decay / Recombination / nonradiative / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 372, LQE2016-99, pp. 15-20, Dec. 2016. |
Paper # |
LQE2016-99 |
Date of Issue |
2016-12-09 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
LQE2016-99 Link to ES Tech. Rep. Archives: LQE2016-99 |
Conference Information |
Committee |
LQE |
Conference Date |
2016-12-16 - 2016-12-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2016-12-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Determination of internal quantum efficiency and recombination lifetime by simultaneous photo-acoustic and photoluminescence measurements in GaN |
Sub Title (in English) |
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Keyword(1) |
Nitride |
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GaN |
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PAS |
Keyword(4) |
IQE |
Keyword(5) |
Decay |
Keyword(6) |
Recombination |
Keyword(7) |
nonradiative |
Keyword(8) |
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1st Author's Name |
Kohei Kawakami |
1st Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa Inst. Tech.) |
2nd Author's Name |
Takashi Nakano |
2nd Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa Inst. Tech.) |
3rd Author's Name |
Atsushi A. Yamaguchi |
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Kanazawa Institute of Technology (Kanazawa Inst. Tech.) |
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Speaker |
Author-3 |
Date Time |
2016-12-16 11:40:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
LQE2016-99 |
Volume (vol) |
vol.116 |
Number (no) |
no.372 |
Page |
pp.15-20 |
#Pages |
6 |
Date of Issue |
2016-12-09 (LQE) |
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