| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2017-01-30 10:00 [Invited Talk] Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST)  SDM2016-130 Link to ES Tech. Rep. Archives: SDM2016-130 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by using isoelectronic trap (IET) technology. IET technology was found to increase the ON current (ION) 5 times in P-TFETs and 2 times in N-TFETs. The ION enhancement improved the inverter performance. In addition, ring oscillator (RO) circuit operation with the complementary TFET inverters was experimentally demonstrated for the first time. The RO circuit with IET-TFETs exhibited a higher operation frequency than that with conventional TFETs. IET technology provides a breakthrough towards realizing complementary circuits with Si-TFETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Tunnel Field-Effect Transistor / Isoelectronic Trap / Complementary Integrated Circuit / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 448, SDM2016-130, pp. 1-4, Jan. 2017. | |
| Paper # | SDM2016-130 | |
| Date of Issue | 2017-01-23 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2016-130 Link to ES Tech. Rep. Archives: SDM2016-130 |
|
| Conference Information | |
| Committee | SDM |
| Conference Date | 2017-01-30 - 2017-01-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2017-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology |
| Sub Title (in English) | |
| Keyword(1) | Tunnel Field-Effect Transistor |
| Keyword(2) | Isoelectronic Trap |
| Keyword(3) | Complementary Integrated Circuit |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takahiro Mori |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 2nd Author's Name | Hidehiro Asai |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 3rd Author's Name | Junichi Hattori |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 4th Author's Name | Koichi Fukuda |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 5th Author's Name | Shintaro Otsuka |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 6th Author's Name | Yukinori Morita |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 7th Author's Name | Shin-ichi O'uchi |
| 7th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 8th Author's Name | Hiroshi Fuketa |
| 8th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 9th Author's Name | Shinji Migita |
| 9th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 10th Author's Name | Wataru Mizubayashi |
| 10th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 11th Author's Name | Hiroyuki Ota |
| 11th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 12th Author's Name | Takashi Matuskawa |
| 12th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (ANational Institute of Advanced Industrial ScieIST) |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2017-01-30 10:00:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2016-130 |
| Volume (vol) | vol.116 |
| Number (no) | no.448 |
| Page | pp.1-4 |
| #Pages | 4 |
| Date of Issue | 2017-01-23 (SDM) |
[Return to Top Page]