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Paper Abstract and Keywords
Presentation 2017-04-20 13:50
[Invited Lecture] A 1.0 V Operation NAND Flash Memory Program Voltage Generator Fabricated with Standard CMOS Process and NAND Flash Process for IoT Local Devices
Kota Tsurumi, Masahiro Tanaka, Ken Takeuchi (Chuo Univ.) ICD2017-5 Link to ES Tech. Rep. Archives: ICD2017-5
Abstract (in Japanese) (See Japanese page) 
(in English) NAND flash memory is considered as candidates for data storage of IoT local devices. The NAND flash memory program voltage generator with low supply voltage is required, due to IoT local devices operates low power. In this paper, 1.0V operation NAND flash memory program voltage generator is proposed. In the conventional, the 1.8V operation boost converter is fabricated with NAND flash process is proposed. On the other hand, the proposed boost converter consists of NAND flash process and standard CMOS process. As a result, the proposed boost converter decreases 89% ramp-up time and reduces about 15 % chip cost compared with the conventional boost converter.
Keyword (in Japanese) (See Japanese page) 
(in English) IoT / boost converter / NAND flash memory / IoT local devices / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 9, ICD2017-5, pp. 23-28, April 2017.
Paper # ICD2017-5 
Date of Issue 2017-04-13 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2017-04-20 - 2017-04-21 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Paper Information
Registration To ICD 
Conference Code 2017-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 1.0 V Operation NAND Flash Memory Program Voltage Generator Fabricated with Standard CMOS Process and NAND Flash Process for IoT Local Devices 
Sub Title (in English)  
Keyword(1) IoT  
Keyword(2) boost converter  
Keyword(3) NAND flash memory  
Keyword(4) IoT local devices  
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1st Author's Name Kota Tsurumi  
1st Author's Affiliation Chuo university (Chuo Univ.)
2nd Author's Name Masahiro Tanaka  
2nd Author's Affiliation Chuo university (Chuo Univ.)
3rd Author's Name Ken Takeuchi  
3rd Author's Affiliation Chuo university (Chuo Univ.)
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Date Time 2017-04-20 13:50:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2017-5 
Volume (vol) vol.117 
Number (no) no.9 
Page pp.23-28 
#Pages
Date of Issue 2017-04-13 (ICD) 


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