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Paper Abstract and Keywords
Presentation 2017-04-21 10:00
[Invited Lecture] A 55nm Ultra Low Leakage Deeply Depleted Channel Technology Optimized for Energy Minimization in Subthreshold SRAM and Logic
Harsh N. Patel, Abhishek Roy, Farah B. Yahya, Ningxi Liu, Benton Calhoun (UVA), Akihiko Harada (FEA), Kazuyuki Kumeno, Makoto Yasuda, Taiji Ema (MIFS) ICD2017-11 Link to ES Tech. Rep. Archives: ICD2017-11
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents an Ultra-Low Leakage (ULL) 55nm Deeply Depleted Channel (DDC) process technology. The 6T SRAM array operates reliably down to 200mV, and the FIR filter consumes just 4.5pJ/cycle.
Keyword (in Japanese) (See Japanese page) 
(in English) DDC / ULL / Sub-threshold / SRAM / FIR / Ultra Low Leak / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 9, ICD2017-11, pp. 57-61, April 2017.
Paper # ICD2017-11 
Date of Issue 2017-04-13 (ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2017-11 Link to ES Tech. Rep. Archives: ICD2017-11

Conference Information
Committee ICD  
Conference Date 2017-04-20 - 2017-04-21 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2017-04-ICD 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 55nm Ultra Low Leakage Deeply Depleted Channel Technology Optimized for Energy Minimization in Subthreshold SRAM and Logic 
Sub Title (in English)  
Keyword(1) DDC  
Keyword(2) ULL  
Keyword(3) Sub-threshold  
Keyword(4) SRAM  
Keyword(5) FIR  
Keyword(6) Ultra Low Leak  
Keyword(7)  
Keyword(8)  
1st Author's Name Harsh N. Patel  
1st Author's Affiliation University of Virginia (UVA)
2nd Author's Name Abhishek Roy  
2nd Author's Affiliation University of Virginia (UVA)
3rd Author's Name Farah B. Yahya  
3rd Author's Affiliation University of Virginia (UVA)
4th Author's Name Ningxi Liu  
4th Author's Affiliation University of Virginia (UVA)
5th Author's Name Benton Calhoun  
5th Author's Affiliation University of Virginia (UVA)
6th Author's Name Akihiko Harada  
6th Author's Affiliation Fujitsu Electronics America (FEA)
7th Author's Name Kazuyuki Kumeno  
7th Author's Affiliation Mie Fujitsu Semiconductor (MIFS)
8th Author's Name Makoto Yasuda  
8th Author's Affiliation Mie Fujitsu Semiconductor (MIFS)
9th Author's Name Taiji Ema  
9th Author's Affiliation Mie Fujitsu Semiconductor (MIFS)
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Speaker
Date Time 2017-04-21 10:00:00 
Presentation Time 25 
Registration for ICD 
Paper # ICD2017-11 
Volume (vol) 117 
Number (no) no.9 
Page pp.57-61 
#Pages
Date of Issue 2017-04-13 (ICD) 


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